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学术论文

信息存储材料及器件研究所文章目录

信息存储材料及器件研究所文章目录(2010-2017

(截止时间:2017-12-31)

一、期刊论文:

2017

(1)The impact of membrane surface charges on the ion transport in MoS2 nanopore power generators,Zhuo Huang, Yan Zhang, Tomoki Hayashida, Ziwei Ji, Yuhui He, Makusu Tsutsui, Xiang Shui Miao and Masateru Taniguchi,Applied Physics Letters,111, 263104 (2017)

(2)Reprogrammable logic in memristive crossbar for in-memory computing, Long Cheng, Mei-Yun Zhang, Yi Li, Ya-Xiong Zhou, Zhuo-Rui Wang, Si-Yu Hu, Shi-Bing Long, Ming Liu and Xiang-Shui Miao, J. Phys. D: Appl. Phys. 50, 505102 (2017)

(3)Effects of Thickness and Temperature on Thermoelectric Properties of Bi2Te3-Based Thin Films, Yang DD, Tong H , Zhou LJ, Miao XS, Chinese Physics Letters, 34, 12, 127301 (2017)

(4)Color printing enabled by phase change materials on paper substrate, Hong-Kai Ji, Hao Tong, Hang Qian, Nian Liu, Ming Xu, and Xiang-Shui Miao*, AIP Advances 7, 125024 (2017)

(5)Filament-to-dielectric band alignments in TiO2 and HfO2 resistive RAMs, Ze-Han Wu, Kan-Hao Xue, Xiang-Shui Miao, J Comput Electron, 16,1057–1065 (2017)

(6)Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor, Yi Li, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu and Xiang-Shui Miao, Applied Physics Letters, 111, 213505 (2017)

(7)Impact of Pressure on the Resonant Bonding in Chalcogenides, Ming Xu, Stefan Jakobs, Riccardo Mazzarello, Ju-Young Cho, Zhe Yang, Henning Hollermann, Dashan Shang, Xiangshui Miao, Zhenhai Yu, Lin Wang, and Matthias Wuttig, J. Phys. Chem. C, 121, 25447-25454 (2017)

(8)Femtosecond Laser-Induced Magnetization Reversal Domain of Co-Sublattice in TbCo Film, Cheng Weiming, Li Xing, Hui Yajuan, Kaifeng Dong, Haiwei Wang, Jincai Chen, Changsheng Xie and Xiangshui Miao, IEEE TRANSACTIONS ON MAGNETICS, Vol. 53, No. 11, 4301205 (2017)

(9)Electrokinetic Analysis of Energy Harvest from Natural Salt Gradients in Nanochannels, He YH, Huang Z, Chen BW,  Tsutsui M, Miao XS, Taniguchi M, SCIENTIFIC REPORTS, Vol. 7, 13156 (2017) 

(10)Positive dependence of thermal conductivity on temperature in GeTe/Bi2Te3 superlattices: the contribution of electronic and particle wave lattice thermal conductivity, Tong H, Lan F, Liu YJ, Zhou LJ, Wang XJ, He Q, Wang KZ, Miao XS, JOURNAL OF PHYSICS D-APPLIED PHYSICS, Volume: 50, Issue: 35, 355102 (2017)

(11)Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions, He WF, Sun HJ*, Zhou YX, Lu K, Xue KH, Miao XS, SCIENTIFIC REPORTS, Volume 7, 10070 (2017) 

(12)Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by Pt insertion, Huang T, Cheng XM*, Guan XW, Wang S, Miao XS, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Volume: 28, Issue: 13, 9606-9611 (2017)

(13)Stability, electronic and thermodynamic properties of aluminene from first-principles calculations, Yuan JH, Yu NN,  Xue KH*, Miao XS, APPLIED SURFACE SCIENCE, Volume: 409,  85-90 (2017)

(14)Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials, Adam AAE*, Cheng XM, Abuelhassan HH, Miao XS, SOLID STATE COMMUNICATIONS, Volume: 259, 19-23 (2017) 

(15)Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array, Zhou YX, Li Y, Su YT, Wang ZR, Shih LY, Chang TC, Chang KC, Long SB, Sze SM, Miao XS*, NANOSCALE, Volume: 9, Issue: 20, 6649-6657 (2017) 

(16)Transport mechanism of the magnetoresistance effects in Ta/CoFe2O4 nanostructures, Hui YJ, Cheng WM*, Zhang ZB,  Wang HW,  Xie CS, Miao XS, APPLIED PHYSICS LETTERS, Volume: 110, Issue: 19, 192404 (2017)

(17)Laser induced ultrafast magnetization reversal in TbCo film, Cheng WM, Li X, Wang HW, Cheng XM, Miao XS, AIP ADVANCES, Volume: 7, Issue: 5, 056018 (2017)

(18)Short channel effects on electrokinetic energy conversion in solid-state nanopores, Zhang Y, He YH, Tsutsui M, Miao XS, Taniguchi M, SCIENTIFIC REPORTS, Volume: 7, 46661 (2017)

(19)Combination of Cation Exchange and Quantized Ostwald Ripening for Controlling Size Distribution of Lead Chalcogenide Quantum Dots, Zhang CW, Xia Y, Zhang ZM, Huang Z, Lian LY, Miao XS, Zhang DL, Beard MC,  Zhang JB, CHEMISTRY OF MATERIALS, Volume: 29, Issue: 8, 3615-3622 (2017) 

(20)Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory, Wang ZR, Su YT, Li Y, Zhou YX,  Chu TJ, Chang KC, Chang TC, Tsai TM, Sze SM, Miao XS*, IEEE ELECTRON DEVICE LETTERS, Volume: 38,  Issue: 2, 179-182(2017) 

(21)Variations of Local Motifs around Ge Atoms in Amorphous GeTe Ultrathin Films, Ma P, Tong H, Huang T, Xu M, Yu NN, Cheng XM, Sun CJ, Miao XS*, JOURNAL OF PHYSICAL CHEMISTRY C, Volume: 121, Issue: 2, 1122-1128 (2017)

(22)Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory, Xue KH, Fonseca LRC, Miao XS, RSC ADVANCES, Volume: 7, Issue: 35, 21856-21868 (2017)

(23)Ideal strength and elastic instability in single-layer 8-Pmmn borophene, Yuan JH, Yu NN, Xue KH, Miao XS, RSC ADVANCES, Volume: 7, Issue: 14, 8654-8660 (2017)

2016

(1)Non-binary colour modulation for display device based on phase change materials, Hong-Kai Ji1†, Hao Tong†, Hang Qian, Ya-Juan Hui, Nian Liu, Peng Yan, Xiang-Shui Miao*, Scientific Reports, Volume: 6, Article Number: 39206 (2016)

(2)Low work function of crystalline GeTe/Sb2Te3 superlattice-like films induced by Te dangling bonds, Qian H, Tong H, Zhou L J, Yan BH, Ji HK, Xue KH, Cheng XM, Miao XS, JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49, Issue: 49, Article Number: 495302 (2016)

(3)Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices, Xue-Bing Yin, Rui Yang, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, Xin Guo, Physical Chemistry Chemical Physics, Volume 18, Issue 46, Pages 31796-31802 (2016)

(4)A Microstructurally Resolved Model for Li-S Batteries Assessing the Impact of the Cathode Design on the Discharge Performance, Vigneshwaran Thangavel, Kan-Hao Xue, Youcef Mammeri, Matias Quiroga, Afef Mastouri, Claude Guéry, Patrik Johansson, Mathieu Morcrette, Alejandro A. Franco, Journal of The Electrochemical Society, Volume 163, Issue 13, Pages A2817-A2829 (2016)

(5)Conductance quantization in an AgInSbTe-based memristor at nanosecond scale, L Jiang,L Xu,JW Chen,P Yan,KH Xue,HJ Sun, XS Miao, Applied Physics Letters, 109(15):153506 (2016)

(6)Temperature dependence of SET switching characteristics in phase-change memory cells , He Q, Li Z, Liu C, Meng XR, Peng JH, Lai ZB, Miao XS, JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49 Issue: 38 Article Number: 385101 , (2016)

(7)Spin-wave propagation steered by electric field modulated exchange interaction, Wang S, Guan XW, Cheng XM, Lian C, Huang T, Miao XS, SCIENTIFIC REPORTS, Volume: 6, Article Number: 31783 (2016)

(8)Effect of Annealing Temperature on the Microstructure and Magnetic Properties of MnGa Films, Cheng WM, Jiang SZ, Xu WC, Hui YJ, Wang HW, Chen JC, Miao XS, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, Volume: 29, Issue: 8, Pages: 2035-2039 (2016)

(9)Fabrication process not limited by the lithography resolution of lateral phase change memory, Lan T, Zhou WL, Miao XS, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Volume: 50, Pages: 1-6 (2016)

(10)Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input, Lu B, Cheng XM, Feng JL, Guan XW, Miao, XS, APPLIED PHYSICS LETTERS, Volume: 109, Issue: 2, Article Number: 023506 (2016)

(11)Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures, Hui YJ, Cheng WM, Zhang ZB, Ji HK, Cheng XM, You L, Miao XS, APPLIED PHYSICS EXPRESS, Volume: 9, Issue: 7, Article Number: 073006 (2016)

(12)Salt-Gradient Approach for Regulating Capture-to-Translocation Dynamics of DNA with Nanochannel Sensors, He YH, Tsutsui M, Scheicher RH, Miao XS, Taniguchi M, ACS SENSORS, Volume: 1, Issue: 6, Pages: 807-816 (2016)

(13)Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy, Guan XW, Cheng XM, Wang S, Huang T, Xue KH, Miao XS, JOURNAL OF ELECTRONIC MATERIALS, Volume: 45 Issue: 6 Pages: 3162-3166 ( 2016)

(14)Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal, Guan XW, Cheng XM, Huang T, Wang S, Xue KH, Miao XS, JOURNAL OF APPLIED PHYSICS, Volume: 119 Issue: 13 Article Number: 133905 (2016)

(15)A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Zhou YX, Li Y, Xu L, Zhong SJ, Xu RG, Miao XS, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Volume: 213 Issue: 4 Pages: 1050-1054 (2016)

(16)Pr-based metallic glass films used as resist for phase-change lithography, Luo T, Li Z, He Q, Miao XS, OPTICS EXPRESS, Volume: 24 Issue: 6 Pages: 5754-5762 (2016)

(17)Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain,Wei Zhou, Zhen Li,Qiang He,Xiang-shui Miao,International Journal of Heat and Mass Transfer, Volume: 94, 301-305(2016).

(18)Rapid thermal evaporation of Bi2S3 layer for thin film photovoltaics, Song HB, Zhan XJ, Li DB, Zhou Y, Yang B, Zeng K, Zhong J, Miao XS, Tang J, SOLAR ENERGY MATERIALS AND SOLAR CELLS, Volume: 146 Pages: 1-7(2016)

(19)Effect of the chalcogenide element doping on the electronic properties of Co2FeAl Heusler Alloys, Huang T, Cheng XM, Guan XW, Miao XS, Journal of Electronic Materials,Volume: 45 Issue: 2 Pages: 1028-1034 (2016)

(20)Charged defects-induced resistive switching in Sb2Te3 memristor, J. J. Zhang, N. Liu, H. J. Sun, P. Yan, Y. Li, S. J. Zhong, S. Xie, R. J. Li, X. S. Miao, Journal of Electronic Materials, Volume: 45 Issue: 2 Pages: 1154-1159 (2016)

(21)Preparation and Magnetic Properties of FePt Nanodot Arrays Sputtering on AAO Templates, Cheng WM, Zhou Y, Guan XW, Hui YJ, Wang S, Miao XS, MATERIALS AND MANUFACTURING PROCESSES, Volume: 31 Issue: 2 Pages: 173-176(2016)

(22)One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates,Jiang SL, Zeng YK, Zhou WL, Miao XS, Yu Y, SCIENTIFIC REPORTS,Volume: 6,Article Number: 19313(2016)

(23)Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar, Li Y, Zhou YX, Xu L, Lu K, Wang ZR, Duan N, Jiang L, Cheng L, Chang TC, Chang KC, Sun HJ, Xue KH, Miao XS*, ACS APPLIED MATERIALS & INTERFACES,  Volume: 8 Issue: 50  Pages:34559-34567 ( 2016) 

2015

(1)Impact of Water-Depletion Layer on Transport in Hydrophobic Nanochannels, Yuhui He, Makusu Tsutsui, Xiang Shui Miao and Masateru Taniguchi, Analytical Chemistry, Volume: 87, Issue: 24 Pages: 12040-12050 (2015)

(2)Optimisation of Write Performance of Phase-Change Probe Memory for Future Storage Applications,Wang L, Wen J, Yang CH, Gai S, Miao XS, NANOSCIENCE AND NANOTECHNOLOGY LETTERS,Volume: 7 Issue: 11 Pages: 870-878(2015)

(3)Improvement of the Half-metallic Stability of Co2FeAl Heusler Alloys by GeTe-doping, Ting Huang, Xiaomin Cheng, Xiawei Guan, and Xiangshui Miao, IEEE Magn., 51(11), 2600504 (2015)

(4)Influenceof Cu Underlayer on the High-Frequency Magnetic Properties of FeCoSiO Thin Films, G. D. Lu, X. S. Miao, W. M. Cheng, X. F. Huang, L. Yang, and L. Q. Pan, IEEE Magn., 51(11), 12801504 (2015)

(5)Pressure-induced novel compounds in the Hf-O system from first-principles calculations, Jin Zhang, Artem R. Oganov, Xinfeng Li, Kan-Hao Xue, Zhenhai Wang, and Huafeng Dong, Physical Review B 92, 184104 (2015)

(6)Modeling the AgInSbTe memristor, J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang, Radioengineering, 24(3), 808-813 (2015).

(7)Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe, Jindong Liu, Xiaomin Cheng, Fei Tong and Xiangshui Miao, Journal of Alloys and Compounds, Vol.650, 70-74 (2015)

(8)Threshold-Voltage Modulated Phase Change Heterojunction for Application of High Density Memory, Baihan Yan, Hao Tong, Hang Qian, and Xiangshui Miao, Applied Physics Letters, 107,133506(2015)

(9)Simple square pulses for implementing spike-timing-dependent plasticity in phase-change memory,Yingpeng Zhong, Yi Li, Lei Xu, and Xiangshui Miao,Physica Status Solidi - Rapid Research Letters,Vol. 9, No. 7, 414–419 (2015)

(10)Thickness dependence and magnetization behavior of Mn-doped GeTe phase change materials,Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiangshui Miao, Journal of Materials Science: Materials in Electronics, 26:5202–5208(2015)

(11)Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices, P. Yan, Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun, and X. S. Miao, Applied Physics Letters, 107, 083501 (2015)

(12)Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb2Te3 superlattice-like materials, H. Tong, N. N. Yu, Z. Yang, X. M. Cheng, and X. S. Miao, Journal of Applied Physics, 118, 075704 (2015)

(13)Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films,H. Tong, Z. Yang, N. N. Yu, L. J. Zhou, and X. S. Miao, Applied Physics Letters, 107, 082101 (2015)

(14)Transient Structures and Possible Limits of Data Recording in Phase-Change Materials,Jianbo Hu, Giovanni M. Vanacore, Zhe Yang, Xiangshui Miao, and Ahmed H. Zewail,ACS Nano,9(7), 6728-6737 (2015)

(15)Asymmetric structure with high electric–thermal conversion efficiency for nanoscale phase change memory based on three-dimensional simulation, Tian Lan, Jinjie Sun, Xiao Min Cheng, Jiao Zhou, Xiangshui Miao, Micro & Nano Letters, Vol. 10, Issue. 2, 76–80 (2015)

(16)Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography, Ri Wen Ni, Bi Jian Zeng, Jun Zhu Huang, Teng Luo, Zhen Li, Xiang Shui Miao, Optical Engineering 54(4), 045103 ( 2015)

(17)Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices, Jiao Zhou, Hongkai Ji, Tian Lan, Junbing Yan, Wenli Zhou, and Xiangshui Miao, Journal of Electronic Materials, Vol. 44, No. 1, 235-243 (2015)

(18)Local order origin of thermal stability enhancement in amorphous Ag doping GeTe, L. Xu, Y. Li, N. N. Yu, Y. P. Zhong, and X. S. Miao, Applied Physics Letters, 106, 031904 (2015)

(19)Novel multilayer structure design of metallic glass film deposited Mg alloy with superior mechanical properties and corrosion resistance, Ge Wu, Yong Liu, Chang Liu, Qing-Hua Tang, Xiang-Shui Miao, Jian Lu, Intermetallics, 62, 22-26 (2015)

(20)16 Boolean logics in three steps with two anti-serially connected memristors, Yaxiong Zhou, Yi Li, Lei Xu, Shujing Zhong, Huajun Sun, and Xiangshui Miao, Applied Physics Letters, 106, 233502 (2015)

(21)Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks, Yi Li, Lei Xu, Ying-Peng Zhong, Ya-Xiong Zhou , Shu-Jing Zhong , Yang-Zhi Hu , Leon O. Chua, and Xiang-Shui Miao, Advanced Electronic Materials, 1(8), 1500125 (2015)

(22)Thickness dependence of magnetic properties in La–Co substituted strontium hexaferrite films with perpendicular anisotropy, Yajuan Hui , Weiming Cheng , Peng Yan , Jincai Chen , Xiangshui Miao, Journal of Magnetism and Magnetic Materials, 390, 56–60 (2015)

2014

(1)Interface structure and magnetism of CoFe/A1-FePt films with perpendicular magnetic anisotropy, X. W. Guan,X. M. Cheng,T. HuangandX. S. Miao, Journal of Applied Physics, 116, 213910 (2014) A类

(2)Structure and phonon behavior of crystalline GeTe ultrathin film, N.N. Yu, H. Tong, X. S. Miao,Applied Physics Letters, 105, 121902 (2014) T2类

(3)Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film, F. Tong,J. D Liu,Xiaomin Cheng,J.H. Hao,G.Y. Gao,H. Tong,X.S. Miao, Thin Solid Films, 568, 70-73 (2014) A类

(4)Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials, Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 117(4), 2115-2119 (2014) B类

(5)Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film, T. Huang, X. M. Cheng, X. W. Guan and X. S. Miao, IEEE Trans. On Magnetics, 50(1), 4400904 (2014),A类

(6)Polarization-based multiple-bit optical data storage,Zeng Bijian, Ni Riwen, Huang Junzhu, Li Zhen, Miao Xiangshui,Journal of Optics, 16, 125402 ( 2014) B类

(7)La-Co pair substituted strontium ferrite films with perpendicular magnetization,Yajuan Hui, Weiming Cheng, Sihai Zhao, Xiaoming Cheng,Xiangshui Miao,IEEE Transactions on Magnetics,50(7), 2800904 (2014) A类

(8)Surface band tuning of Bi2Te3 topological insulator thin films by gas absorption, Liu N, Ju C, Cheng XM, Miao XS, Journal of Electronic Materials, 43(9), 3105-3109 (2004) A类

(9)Effect of Heat Treatments on the Structural and Magnetic Properties of La-Co Substituted Strontium Ferrite Films,Hui YJ,Cheng WM,Lin GQ,Miao XS, JOURNAL OF ELECTRONIC MATERIALS, 43(9), 3640-3645 (2014) A类

(10)Spin-glass behavior and anomalous magnetoresistance in ferromagnetic Ge1-xFexTe epilayer,Liu JD,Cheng XM, Tong F,Miao XS, Journal of Applied Physics, 116(4), 043901 (2014) A类

(11)CIGS Thin Films for Cd-Free Solar Cells by One-Step Sputtering Process,Xiang J,Huang X,Lin GQ,Tang J,Ju C, Miao XS, JOURNAL OF ELECTRONIC MATERIALS, 43(7), 2658-2666 ,2014 A类

(12)Metallic resist for phase-change lithography,Zeng BJ,Huang JZ,Ni RW,Yu NN,Wei W,Hu YZ,Li Z,Miao XS, Scientific Reports(Nature Publishing Group), volume 4, 5300 (2014) T2类

(13)Continuous controllable amorphization ratio of nanoscale phase change memory cells, Q. He, Z. Li, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Applied Physics Letters, 104, 223502 (2014) T2类

(14)Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems, Y. Li, Y. P. Zhong, J.J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng, X. S. Miao, Scientific Reports(Nature Publishing Group), volume 4, 4906 (2014) T2类

2013

(1)Nonvolatile ‘AND’ ‘OR’ ‘NOT’ Boolean Logic Gates Based on Phase-Change Memory, Y. Li, Y. P. Zhong, Y. F. Deng, Y. X. Zhou, L. Xu and X. S. Miao, Journal of Applied Physics, 114, 234503 ,2013 A类

(2)Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F.,Li Z.,Peng J. H., Liu C., Chen W.,Miao X.S., Applied Physics Letters, 103(23), 233501, 2013 T2类

(3)Effects of deposition profiles on RF-sputtered Cu(In,Ga)Se2 films at low substrate temperature, Huang X., Miao X.S., Yu N.N., Guan X. W., Applied Surface Science, Volume 287, Pages 257-262, 2013 A类

(4)Inductively coupled plasma etching for phase-change material with superlattice-like structure in phase change memory device,Jiao Zhou,Ying Chen,Wenli Zhou, Xiangshui Miao,Zhe Yang,Niannian Yu,Hui Liu,Tian Lan,Junbing Yan,Applied Surface Science,Volume 280, Pages 862–867,2013 A类

(5)Phase separation and nanocrystallization behavior above crystallization temperature in Mg–Cu–Y metallic glass thin film, G. Wu, Q.H. Tang, N.N. Yu, X.S. Miao, Thin Solid Films, Volume 545, Pages 38-43, 2013 A类

(6)Nitrogen-induced local spin polarization in graphene on cobalt, Zhongping Chen, Ling Miao, Xiangshui Miao, Journal of Magnetism and Magnetic Materials 342, Pages 144–148, 2013 A类

(7)Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films,Yu N.N.,Tong H.,Zhou J.,Elbashir A.A.,Miao X.S.,Applied Physics Letters, 103(6), 061910, 2013 T2类

(8)Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5,Li Y.,Zhong Y.P.,Zhang J.J.,Xu X.H., Wang Q.,Xu L,Sun H.J.,Miao X.S., Applied Physics Letters,103(4), 043501, 2013 T2类

(9)AgInSbTe memristor with gradual resistance tuning,Zhang J.J.,Sun H.J.,Li Y.,Wang Q.,Xu X.H.,Miao X.S., Applied Physics Letters,102(18), 183513, 2013 T2类

(10)Picosecond amorphization of chalcogenides material: From scattering to ionization,Wang, P.Ju, C., Chen, W,Huang, D.Q, X. S. Miao,Applied Physics Letters,102(11), 112108, 2013 T2类

(11)Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition,Liu, J.D.,Miao, X.S.;Tong, F.;Luo, W.;Xia, Z.C., Applied Physics Letters, 102(10), 102402,2013 T2类

(12)Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao, Scientific Reports(Nature Publishing Group), volume 3, 1619,2013. T2类

(13)A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip,J.H. Wang,J. Zhou,W.L. Zhou,H. Tong,D.Q. Huang,J.J. Sun,L. Zhang,X.M. Long,Y. Chen,L.W. Qu,X.S. Miao,Solid-State Electronics,Volume 81, Pages 157–162, 2013 B类

(14)Effect of Sputtering Parameters on the Magnetic Properties of SmCo5/Cu Films,W.M. Cheng,H. Hu,Y.F. Dai,X.M. Cheng&X.S. Miao, Materials and Manufacturing Processes,Volume 28,Issue 5, pages505-508, 2013 B类

2012:

(1)Electrode Materials for Ge2Sb2Te5-Based Memristors, Wang Q, Sun HJ, Zhang JJ, Xu XH, Miao XS, JOURNAL OF ELECTRONIC MATERIALS, 41(12), 3417-3422 (2012).

(2)Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS, APPLIED PHYSICS LETTERS, Volume: 101, Issue: 14, Article Number: 142107, OCT 2012.

(3)A new TiW seedlayer for SmCo5 films with perpendicular magnetic anisotropy, Cheng WM, Liu WW, Wang X, Cheng XM, Miao XS, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, Volume:324, Issue:22, Pages: 3658-3661,NOV 2012.

(4)Effect of Cu substitution on the magnetic properties of SmCo5 film with perpendicular magnetic anisotropy, JOURNAL OF ELECTRONIC MATERIALS, Cheng WM, Dai YF, Hu H, Cheng XM, Miao XS, Volume: 41, Issue: 8, Pages: 2178-2183, AUG 2012.

(5)Magnetic moments in SmCo5 and SmCo5Cu films, Cheng WM, Zhao SH, Cheng XM, Miao XS, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, Volume: 25, Issue: 6, Pages: 1947-1950, JUN 2012.

(6)Amorphization and amorphous stability of Bi2Te3 chalcogenide films, Ju C, Cheng XM, Miao XS, APPLIED PHYSICS LETTERS, Volume: 100, Issue: 14, Article Number: 142114, APR 2012.

(7)Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure, Long PY, Tong H, Miao XS, APPLIED PHYSICS EXPRESS, Volume: 5, Issue: 3, Article Number: 031201, MAR 2012.

(8)Dynamic switching characteristic dependence on sidewall angle for phase change memory, Long XM, Miao XS, Sun JJ, Cheng XM, Tong H, Li Y, Yang DH, Huang JD, Liu C, SOLID-STATE ELECTRONICS, Volume: 67, Issue: 1, Pages: 1-5, JAN 2012.

(9)王苹,黄冬麒,李震,缪向水,相变存储器单元皮秒测试信号完整性研究,华中科技大学学报(自然科学版),第40卷,第9期,34-38(2012)

(10)张乐,李震,陈伟,缪向水,基于二分法的混合信号接口板的设计,微电子学与计算机,第04期,67-70(2012)

(11)相变存储器存储单元瞬态电流测量,马翠李震,彭菊红,缪向水计算机与数字工程,40卷,2期,130-132页,2012年.

(12)SmCo5垂直磁记录薄膜的研究进展,程伟明,胡浩,戴亦凡,缪向水,信息记录材料,13卷,1期,53-59页,2012年.

2011:

(1)Insulator-metal transition in GeTe/Sb2Te3 multilayer induced by grain growth and interface barrier, Tong H, Miao XS, Yang Z, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 21, Article Number: 212105, NOV 21 2011

(2)Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor, Tong F, Hao JH, Chen ZP, Gao GY, Tong H, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 20, Article Number: 202508, NOV 14 2011

(3)Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition, Tong F, Hao JH, Chen ZP, Gao GY, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 8, Article Number: 081908, AUG 22 2011

(4)Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Huang DQ, Miao XS, Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y, Long XM, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011

(5)Half-metallicity of wurtzite NiO and w-NiO/ZnO (0001) interface: First principles simulation, Chen ZP, Miao L, Miao XS, AIP ADVANCES, Volume: 1, Issue: 2, Article Number: 022124, JUN 2011

(6)Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping, Zhang DL, Zhang JB, Guo Z, Miao XS, JOURNAL OF ALLOYS AND COMPOUNDS, Volume: 509, Issue: 20, Pages: 5962-5968, MAY 19 2011

(7)Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol-Gel Technique on Different Substrates, Zhang DL, Huang YP, Zhang JB, Yuan L, Miao XS, JOURNAL OF ELECTRONIC MATERIALS, Volume: 40, Issue: 4, Pages: 459-465, APR 2011

(8)Thermal conductivity of chalcogenide material with superlatticelike structure, Tong H, Miao XS, Cheng XM, Wang H, Zhang L, Sun JJ, Tong F, Wang JH, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 10, Article Number: 101904, MAR 7 2011

(9)Theoretical Investigation of Structural and Magnetic Properties of ZnnSen (n=6-13) Nanoclusters Doped with Manganese Atoms, Zhang DL, Chen LY, Zhang JB, Miao XS, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Volume: 94, Issue: 3, Pages: 759-764, MAR 2011

(10)SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer, Qu LW, Miao XS, Sheng JJ, Li Z, Sun JJ, An P, Huang JD, Yang DH, Liu C, SOLID-STATE ELECTRONICS, Volume: 56, Issue: 1, Pages: 191-195, FEB 2011

(11)非对称结构相变存储单元制备及性能研究,鄢俊兵,温学鑫,程晓敏,缪向水,纳米科技, 8卷,1期,16-18页,2011年

(12)非对称结构相变存储单元的三维模拟与分析,孙巾杰,缪向水,程晓敏,鄢俊兵,计算机与数字工程, 39卷,5期,10-12页,2011年

(13)Al基金属玻璃的研究进展, 汪超,何翠群,缪向水,材料导报, 25卷,专辑17,254-257页,2011年

(14)基于反常霍尔效应的薄膜磁滞回线测量系统的原理与设计,周卓作杨晓非李震董凯锋磁性材料及器件,42卷,2期,43-45页, 2011年

2010:

(1)Effective method to identify the vacancies in crystalline GeTe, Tong F, Miao XS, Wu Y, Chen ZP, Tong H, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 97, Issue: 26, Article Number: 261904, DEC 27 2010

(2)Title: Microstructure, Morphology, and Ultraviolet Emission of Zinc Oxide Nanopolycrystalline Films by the Modified Successive Ionic Layer Adsorption and Reaction Method, Zhang DL, Zhang JB, Wu QM, Miao, XS, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Volume: 93, Issue: 10, Pages: 3284-3290, OCT 2010

(3)Title: Ultraviolet Emission and Electrical Properties of Aluminum-Doped Zinc Oxide Thin Films with Preferential C-Axis Orientation, Zhang DL, Zhang JB, Cheng YG, Yuan L, Miao XS, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Volume: 93, Issue: 10, Pages: 3291-3298, OCT 2010

(4)Influences of Substrate Temperature on Structure, Electrical and Optical Properties of Magnetron Sputtering Ge2Sb2Te5 Films, Sun HJ, Hou LS, Miao XS, Wu YQ, RARE METAL MATERIALS AND ENGINEERING, Volume: 39, Issue: 3, Pages: 377-381, MAR 2010

(5)Growth orientation and shape evolution of colloidal lead selenide nanocrystals with different shapes, Zhang DL, Zhai GM, Zhang JB, Yuan L, Miao XS, Zhu SY, Wang Y, CRYSTENGCOMM, Volume: 12, Issue: 10, Pages: 3243-3248, 2010

(6)Advancements in next-generation memory and photonic devices, Miao XS,Shi TL,Zhang XL,Zhao YD,IEEE Nanotechnology Magazine, Volume: 4, Issue: 1, Pages: 4-8, MAR 2010

 

二、会议论文:

2016

(1)Y. X. Zhou, Y. Li*, L. Xu, and X. S. Miao*, “Realization of functionally complete Boolean logic based on memristive devices”, 2016 International Workshop on Information Storage/10th International Symposium on Optical Storage (IWIS/ISOS 2016), April 10-13, 2016, Changzhou, China. (Poster)

2015

(2)Yi Li, Xiangshui Miao, Chalcogenide based Memristor for Neuromorphic and Logic Computing, The 1st Sino-German Symposium on Electronic and Memory Materials, Nov 1-5, 2015, Aachen, Germany. (Invited)

(3)Y. Li, L. Xu, Y. X. Zhou, and X. S. Miao, Realization of associative learning based on spike timing dependent plasticity of memristive synapse, The 15th Non-Volatile Memory Technology Symposium (NVMTS 2015), Beijing, China, October 12-14, 2015.

(4)闫鹏,李祎,孙华军,缪向水,CuO薄膜忆阻材料制备与导电机制研究,TFC’15全国薄膜技术学术研讨会,武汉,中国,8月21-24号, 2015。

(5)许磊,李祎,缪向水,AgInSbTe硫系化合物忆阻材料及特性研究,TFC’15全国薄膜技术学术研讨会,武汉,中国,8月21-24号, 2015。

(6)

2014

(1)Bijian Zeng, Jun Zhu Huang, Ri Wen Ni, Nian Nian Yu, Wei Wei, Yang Zi Hu, Zhen Li, Xiang Shui Miao, Metallic resist for phase change lithography, Optical Data Storage 2014, San Diego, US, August 2014 (Invited talk)

(2)Xiawei Guan, Xiaomin Cheng, Ting Huang, Xiangshui Miao, Interfacial mechanism of high perpendicular anisotropy in CoFe/A1-FePt films for spintronic device application,InterMAG2014, Dresden, Germany, May 4th-8th, 2014

(3)Ting Huang, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao, Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film, InterMAG2014, Dresden, Germany, May 4-8, 2014

(4)Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao, Ferromagnetism Modulation by Phase Change in Mn doped GeTe Chalcogenide Magnetic Material,InterMAG2014, Dresden, Germany,May 4th-8th, 2014

(5)Zhou Jiao, Hongkai Ji, Tian Lan, Junbing Yan, Wenli Zhou, Xiangshui Miao. New Insulating Layer for Phase Change Memory Devices with Low RESET Current, 2014 MRS Spring Meeting , San Francisco, US, April 21-25, 2014.

(6)Niannian Yu, Hao Tong, Xiangshui Miao, Structural variety of amorphous phase change ultrathin films, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy, Phoenix Arizona, US, March 10-14, 2014.

2013:

(7)Chalcogenide Memristors for Neuromorphic Computing,X. S. Miao, Y. Li, J. J. Zhang, Y. P. Zhong, L. Xu, X. M. Cheng, 13th Non-Volatile Memory Technology Symposium (NVMTS), US, AUG 2013(Invited talk)

(8)Three-Dimensional Simulation and Analysis of Phase Change Random Access Memory Cell with Novel Asymmetric Structure, J.J Sun,X.M Cheng, X.S Miao, 13th Non-Volatile Memory Technology Symposium (NVMTS), US, AUG 2013

(9)Fabrication independent from lithography resolution for lateral phase change random access memory, T.Lan, W.L.Zhou, J.Zhou, X.S.Miao, 13th Non-Volatile Memory Technology Symposium (NVMTS), US, AUG 2013

(10)Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Niannian Yu, Hao Tong, Xiangshui Miao, 13th Non-Volatile Memory Technology Symposium (NVMTS), US, AUG 2013

(11)La-Co pair substituted strontium ferrite films with perpendicular magnetization, Y. J. Hui, W. M. Cheng, G. Q. Lin and X. S. Miao, Asia-Pacific Data Storage Conference 2013 (APDSC’13), Taiwan, NOV 2013(Invited talk)

(12)Coexistence of charge trapping andsilver filaments in AgInSbTe memristor, J. J. Zhang,H. J. Sun, Y. Li, Q. Wang, X. H. Xu and X. S. Miao, 2013 European Phase Change and Ovonic Science Symposium (E*PCOS), Germany, SEP 2013 (poster)

(13)Phase-Change Lithography based on Metallic Glass Thin Film, B. J. Zeng, J. Z. Huang, Z. Li, X. S. Miao, International Symposium on Photoelectronic Detection and Imaging (ISPDI ), Beijing, JUN2013 (Invited talk)

(14)相变存储器及忆阻器,缪向水,国际微电子学术会议,武汉,2013年8月

(15)硫系化合物半导体材料-从相变存储器到忆阻器,缪向水,第八届中国功能材料及其应用学术会议,哈尔滨,2013年8月

2012:

(16)A Promising Artificial Electronic Synapse : Phase-Change Memory,Y. Li, X. S. Miao, Y. P. Zhong, H. J. Sun, 12th Non-Volatile Memory Technology Symposiym (NVMTS), Singapore, NOV 2012(Invited talk)

(17)Phase change material and phase change memory, X. S. Miao, H. Tong, X. M. Cheng, Z. Li, W. L. Zhou, 2012 International Workshop on Information Storage/9th International Symposium on Optical Storage (IWIS/ISOS 2012), Shanghai, China, OCT 2012(Invited talk)

(18)Phase Change Lithography and Wet-etching Based on Metallic Glass Materials, B. J. Zeng, X. S. Miao, Z. Li, W. L. Zhou, International Symposium on Optical Memory (ISOM), Japan, SEP 2012(Invited talk)

(19)Phase change materials and phase change memory, X. S. Miao, 1stAsian Nonvolatile Memory Workshop, Beijing, China, JUL 2012(Invited talk)

(20)Implementation of neuronal and synaptic functions in phase change memory, Y. Li, X. S. Miao, Y. P. Zhong, H. J. Sun, 2012 European Phase Change and Ovonic Science Symposium (E*PCOS), Tampere, Finland, JUL 2012 (Invited poster)

(21)Nanopatterning by Phase Change Nanolithography, X. S. Miao, B. J. Zeng, Z. Li, W. L. Zhou, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2012), MAR2012 (Invited talk)

2011:

(1)Nanolithography by Phase Change Materials, X. S. Miao, B. J. Zeng, Z. Li, W. L. Zhou, International Symposium on Advanced Nanomaterials and Nanosystems (ANN2011), China, NOV 2011 (Invited talk)

(2)Phase-change control of ferromagnetism in GeTe-based phase change magnetic films, F. Tong, X. S. Miao, 2011 European Phase Change and Ovonic Science Symposium, Swiss, SEP 2011 (Invited talk)

(3)Identification of Vacancy Ratio in Crystalline GeTe Films , F. Tong, X. S. Miao , Joint International Symposium on Optical Memory and Optical Data Storage (ISOM/ODS), USA, JUL 2011 (Invited talk)

(4)First Principles Calculation on Magnetic Properties of SmCo5 Doped with Transition Metals , W. M. Cheng, H. Tang, S.H. Zhao, X. M. Cheng, X. S. Miao, Proceedings of 4th international conference on magneto science, China, OCT 2011

(5)Effect of Sputtering Parameters and Annealing on the Magnetic Properties of SmCo Films, W. M. Cheng, H. Hu, Y. F. Dai, X. M. Cheng, X. S. Miao, Proceedings of 4th international conference on magneto science, China, OCT 2011

(6)Calculation of Magnetic Anisotropy Energy SmCo5-XCuX, W. M. Cheng, S.H. Zhao, X. M. Cheng, X. S. Miao, Proceedings of 4th international conference on magneto science, China, OCT 2011

(7)Influence of Cu Substitution on the Magnetic Properties and Microstructure of SmCo Films, W. M. Cheng, Y. F. Dai, H. Hu, X. M. Cheng, X. S. Miao, Proceedings of 4th international conference on magneto science, China, OCT 2011

2010:

(1)Thermal conductivity of phase change material with superlattice structure, Tong H, Wang H, Miao XS, 2010 European Phase Change and Ovonic Science Symposium, Italy, SEP 2010 (Invited poster)

(2)Nonvolatile Phase Change Random Access Memory, X. S. Miao, W. L. Zhou, X. M. Cheng and Z. Li, International Symposium on Advanced Nanomaterials and Nanosystems (ANN2010), Japan, MAY 2010 (Invited talk)

(3)New video disc for high-density storage, 26thOptical Data Storage (ODS) Topical Meeting, USA, MAY 2010 (Invited talk)

(数据更新至2017年06月23日)