信息存储材料及器件研究所文章目录（2008-2020）
(截止时间：2020-12-31)
一、期刊论文：
2020
(1) Enhancing LiAlOx synaptic performance by reducing the Schottky barrier height for deep neural network applications. Yaoyao Fu, Boyi Dong, Wan-Ching Su, Chih-Yang Lin, Kuan-Ju Zhou,Ting-Chang Chang, Fuwei Zhuge, Yi Li, Yuhui He, Bin Gao and Xiang-Shui Miao, Nanoscale. 12: 22970-22977 (2020).
(2) Suppressed resistance drift from short range order of amorphous GeTe ultrathin films. Ping Ma, Hao Tong, Ming Xu, Xiaomin Cheng and Xiangshui Miao*, Applied Physics Letters, 117:22109 (2020).
(3) Iron-based metallic glass for improved resolution, maskless phase-change photolithography. Chao He, Zhe Yang, Chao Chen, Hao Tong and Xiangshui Miao, Applied Optics, 59:5547-5552 (2020).
(4) Ming Xu,* Xianliang Mai, Jun Lin, Wei Zhang, Yi Li, Yuhui He, Hao Tong, Xiang Hou, Peng Zhou* and Xiangshui Miao*, Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials, Advanced Functional Materials. 30, 2003419 (2020)
(5) Substrate-modulated ferromagnetism of two-dimensional Fe3GeTe2. Luman Zhang, Luyao Song, Hongwei Dai, Jun-Hui Yuan, Mingshan Wang, Xinyu Huang, Lei Qiao, Hui Cheng, Xia Wang, Wei Ren, Xiangshui Miao, Lei Ye, Kan-Hao Xue, and Jun-Bo Han, Applied Physics Letters,116:42402 (2020).
(6) Unveiling the Structural Descriptor of A3B2X9 Perovskite Derivatives toward X‐Ray Detectors with Low Detection Limit and High Stability. Mengling Xia, Jun-Hui Yuan, Guangda Niu,* Xinyuan Du, Lixiao Yin, Weicheng Pan,Jiajun Luo, Zhigang Li, Hongtao Zhao, Kan-Hao Xue, Xiangshui Miao, and Jiang Tang. Advanced Functional Materials, 30, 24 (2020).
(7) Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices. Chih-Yang Lin, Jia Chen, Po-Hsun Chen, Ting-Chang Chang,* Yuting Wu,Jason K. Eshraghian, John Moon, Sangmin Yoo, Yu-Hsun Wang, Wen-Chung Chen,Zhi-Yang Wang, Hui-Chun Huang, Yi Li, Xiangshui Miao, Wei D. Lu, and Simon M. Sze. Small. 16:e2003964 (2020).
(8) All-Inorganic Copper Halide as a Stable and Self-Absorption-Free X‑ray Scintillator. Xue Zhao, Guangda Niu,* Jinsong Zhu, Bo Yang, Jun-Hui Yuan, Shunran Li, Wanru Gao, Qingsong Hu,Lixiao Yin, Kan-Hao Xue, Efrat Lifshitz,* Xiangshui Miao, and Jiang Tang. The Journal of Physical Chemistry Letters. 11:1873-1880 (2020).
(9) Magnetic Transition of Metallic Phase-Change Materials. Chao He, Chong Qiao, Zhe Yang, Weiming Cheng, Hao Tong, and Xiangshui Miao*. Physica status solidi. PSS-RRL. Rapid research letters. 2020.
(10) Dynamically tunable transmissive color filters using ultra-thin phase change materials. Qiang He, Nathan Youngblood, Zengguang Cheng, Xiangshui Miao, Harish Bhaskaran. Optics Express. 28:39841-39849 (2020).
(11) Unique 2D–3D Structure Transformations in Trichalcogenide CrSiTe3 under High Pressure. Kailang Xu, Zhenhai Yu, Wei Xia, Meng Xu, Xianliang Mai, Lin Wang, Yanfeng Guo, Xiangshui Miao, and Ming Xu*. Journal of Physical Chemistry. C. 124:15600-15606 (2020).
(12) Global Exponential Stability of Memristive Neural Networks With Mixed Time-Varying Delays. Yin Sheng , Tingwen Huang , Zhigang Zeng and Xiangshui Miao. IEEE Transaction on Neural Networks and Learning Systems. 1-10 (2020).
(13) Effects of Temperature on the Performance of Hf₀.₅Zr₀.₅O₂-Based Negative Capacitance FETs. Wang C, Wu J, Yu H, Han G, Miao X, Wang X. IEEE Electron Device Letters. 41:1625-1628 (2020).
(14) A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs. Wu T, Luo H, Wang X, Asenov A, Miao X. IEEE Transactions on Electron Devices. 67:2255-2262 (2020).
(15) “Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization. Feng Jinglong, Lotnyk A, Bryja H, et al. ACS Applied Materials & Interfaces. 12:33397-33407 (2020).
(16) Deposition Temperature and Thickness Effect on the Resistive Switching in BiFeO3 Films. Wang T, Cheng L, Wang C, et al. IEEE Transactions on Magnetics. 56:1-4 (2020).
(17) In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor. Cheng L, Zheng H, Li Y, Chang T, Sze SM, Miao X. IEEE Transactions on Electron Devices. 67:1293-1296 (2020).
(18) Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing. Lu Y, Li Y, Li H, et al. IEEE Electron Device Letters.41:1245-1248 (2020).
(19) Chao Chen, Shu Chen, Ricardo P. S. M. Lobo, Carlos Maciel-Escudero, Martin Lewin, Thomas Taubner, Wei Xiong, Ming Xu,* Xinliang Zhang, Xiangshui Miao, Peining Li,* Rainer Hillenbrand,* Terahertz Nanoimaging and Nanospectroscopy of Chalcogenide Phase-Change Materials, ACS Photonics, 7, 5499-5506 (2020).
(20) Wenna Ge, Kailang Xu, Wei Xia, Zhenhai Yu,* Hongyuan Wang, Xiaolei Liu, Jinggeng Zhao, Xia Wang, Na Yu, Zhiqiang Zou, Zhipeng Yan, Lin Wang, Ming Xu,* Yanfeng Guo, Raman spectroscopy and lattice dynamical stability study of 2D ferromagnetic semiconductor Cr2Ge2Te6 under high pressure, Journal of Alloys and Compounds, 819 153368 (2020).
(21) C. Fang, Meng Xu, J. Ma, J. Wang, L. Jin, Ming Xu, Dehui Li,* Large Optical Anisotropy in Two-Dimensional Perovskite [CH(NH2)2][C(NH2)3]PbI4 with Corrugated Inorganic Layers, Nano Letters, 20,2339-2347 (2020).
(22) An artificial synapse by superlattice-like phase-change material for low-power brain-inspired computing. Hu Q, Dong B, Wang L, et al. Chinese Physics B. 29:70701 (2020).
(23) Metal–Semiconductor–Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsibility Rejection Ratio and Their Gain Mechanism. Qin Y, Li L, Zhao X, et al. ACS photonics. 7:812-820 (2020).
(24) Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice-Like Phase-Change Materials. Zhou L, Yang Z, Wang X, et al. Advanced Electronic Materials. 6 (2020).
(25) Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor. Xue W, Li Y, Liu G, et al. Advanced Electronic Materials. 6 (2020).
(26) In-Memory Hamming Weight Calculation in a 1T1R Memristive Array. Cheng L, Li J, Zheng H, et al. Advanced Electronic Materials. 6 (2020).
(27) One-Dimensional All-Inorganic K2CuBr3 with Violet Emission as Efficient X‑ray Scintillators. Gao W, Niu G, Yin L, et al. ACS applied electronic materials. 2:2242-2249 (2020).
(28) Two-dimensional perovskites as sensitive strain sensors. Xia M, Yuan J, Luo J, et al. Journal of materials chemistry. C, Materials for optical and electronic devices. 8:3814-3820 (2020).
(29) Meng Xu, Chong Qiao, Kan-Hao Xue, Hao Tong, Xiaomin Cheng, Songyou Wang, Cai-Zhuang Wang, Kai-Ming Ho, Ming Xu,* Xiangshui Miao, Polyamorphism in K2Sb8Se13 for multi-level phase-change memory, Journal of Materials Chemistry C, 8, 6364 (2020).
(30) Recent Progress on Memristive Convolutional Neural Networks for Edge Intelligence. Qin Y, Bao H, Wang F, Chen J, Li Y, Miao X. Advanced Intelligent Systems. 2:2000114 (2020).
(31) Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing. Li H, Huang X, Yuan J, et al. Advanced electronic materials. 6 (2020).
(32) Yuan J, Li L, Zhang W, et al. Pt5Se4 Monolayer: A Highly Efficient Electrocatalyst toward Hydrogen and Oxygen Electrode Reactions. ACS Applied Materials & Interfaces. 12:13896 (2020).
(33) Huang XD, Li Y, Li HY, Lu YF, Xue KH, Miao XS. Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach. Applied Physics Letters. 116:173504 (2020).
(34) Qin Y, Kuang R, Huang X, Li Y, Chen J, Miao X. Design of High Robustness BNN Inference Accelerator Based on Binary Memristors. IEEE Transactions on Electron Devices，67:3435-3441(2020).
(35) Yuan J, Mao G, Xue K, Wang J, Miao X. A new family of two-dimensional ferroelastic semiconductors with negative Poisson's ratios. Nanoscale, 12:14150-14159 (2020).
(36) Huang X, Li Y, Li H, Xue K, Wang X, Miao X. Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor. IEEE Electron Device Letters. 41:1-1 (2020).
(37) Zhang H, Zhao R, Zhang F, Li Z, Miao X. Modelling of dual-port computing operations of a phase-change memory cell. Journal of Physics. D, Applied Physics, 53:105104 (2020).
(38) Li L, Yuan J, Xue K, et al. Synergic Effect in a New Electrocatalyst Ni2SbTe2 for Oxygen Reduction Reaction. Journal of Physical Chemistry. C, 124:3671-3680 (2020).
(39) Pan W, Chen J, Kuang R, et al. Strategies to Improve the Accuracy of Memristor-Based Convolutional Neural Networks. IEEE transactions on electron devices, 67:895-901 (2020).
(40) Chen J, Pan W, Li Y, et al. High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator. IEEE Electron Device Letters, 41:353-356 (2020).
2019
(1) Mingtao Li,# Kailang Xu,# Ming Xu,# Yifei Fang, Zhipeng Yan, Nana Li, Zhenhai Yu, Jinbo Zhang, Curtis Kenney-Benson, Xiaoli Wang, Lin Wang,* Pressure-induced electronic anomaly and multiband superconductivity in the doped topological insulator NbxBi2Se3, Physical Review B, 100 (2019) 224521.
(2) Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In‐Memory Computing, Long Cheng, Yi Li, Kang‐Sheng Yin, Si‐Yu Hu, Yu‐Ting Su, Miao‐Miao Jin, Zhuo‐Rui Wang, Ting‐Chang Chang, Xiang‐Shui Miao, Advanced Functional Materials,Volume 29, Issue 49, 1905660 (2019)
(3) Lead-free halide Rb2CuBr3 as sensitive X-ray scintillator, Bo Yang, Lixiao Yin, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Zhifang Tan, Xiang-Shui Miao, Ming Niu, Xinyuan Du, Haisheng Song, Efrat Lifshitz, and Jiang Tang*, Advanced Materials, Volume 31, Issue 44, 1904711 (2019)
(4) Hot-pressed CsPbBr3 quasi-monocrystalline film for sensitive direct X-ray detection, Weicheng Pan, Bo Yang, Guangda Niu*, Kan-Hao Xue, Xinyuan Du, Lixiao Yin, Muyi Zhang, Haodi Wu, Xiang-Shui Miao, and Jiang Tang*, Advanced Materials, Volume 31, Issue 44, 1904405 (2019)
(5) Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging, Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang*, Nature Communications 10, 1989 (2019)
(6) Nanochannel-Based Transport in an Interfacial Memristor Can Emulate the Analog Weight Modulation of Synapses，Pan Zhang，Min Xia，Fuwei Zhuge, Yue Zhou, Zhenyu Wang, Boyi Dong, Yaoyao Fu, Kecheng Yang, Yi Li, Yuhui He*, Ralph H. Scheicher*, Xiang Shui Miao*, Nano Letters, 19, 7, 4279-4286( 2019)
(7) Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching, Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-Shui Miao, Yao-Feng Chang and Byung-Gook Park, Nanoscale, 11, 237-245(2019)
(8) BaAs3: A narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles, Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao, Journal of Materials Science, Volume 54, Issue 19, pp 12676–12687 (2019)
(9) TlP5: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility, Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao, Journal of Materials Chemistry C 7, 639 (2019)
(10) KTlO: A metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism, Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao, Nanoscale 11, 1131 (2019)
(11) Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations, Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue*, and Xiang-Shui Miao, Applied Surface Science, Volume 469, Pages 456-462 (2019)
(12) Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films, Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu, IEEE Electron Device Letters 40, 570 (2019)
(13) Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge2P4S2 and Ge2As4S2, Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Kan-Hao Xue*, Sheng Wang, Chen Lian, Zhao-Nan Li, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao, International Journal of Hydrogen Energy, Volume 44, Issue 39, Pages 21536-21545 (2019)
(14) LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing, Chen Jia, Lin Chih-Yang, Li Yi, Qin Chao, Lu Ke, Wang Jie-Ming, Chen Chun-Kuei, He Yu-Hui, Chang Ting-Chang, Sze Simon M, Miao Xiang-Shui, IEEE Electron Device Letters, vol. 40, issue 4, pp. 542-545 (2019)
(15) Implementation of All 27 Possible Univariate Ternary Logics With a Single ZnOmemristor, Zhang Yue-Jun; Chen Xin-Hui; Wang Zhuo-Rui; Chen Qi-Lai; Liu Gang; Li Yi; Wang Peng-Jun; Li Run-Wei; Miao Xiang-Shui, IEEE TRANSACTIONS ON ELECTRON DEVICES, 66:11, 4710-4715 (2019)
(16) Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility, Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao, Journal of Materials Science 54, 7035 (2019)
(17) Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network, Yangyang Chen, Yue Zhou, Fuwei Zhuge, Bobo Tian, Mengge Yan, Yi Li, Yuhui He & Xiang Shui Miao, npj 2D Materials and Applications volume 3, Article number: 31 (2019)
(18) .Modelling of dual-port computing operations of a phase-change memory cell, Hao Zhang, Rui-Hao Zhao, Fan Zhang, Zhen Li* and Xiang-Shui Miao, J. Phys. D: Appl. Phys. 53 (2020) 105104
(19) Enhancing the efficiency of energy harvesting from salt gradient with ion-selective nanochannel, Zhang Yan; Huang Zhuo; He Yuhui; Miao Xiangshui, Nanotechnology, Volume 30, Issue 29, article id. 295402 (2019).
(20) In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic, Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun, Journal of Materials Chemistry C 7, 7885 (2019)
(21) Local structure origin of ultrafast crystallization driven by high-fidelity octahedral clusters in amorphous Sc0.2Sb2Te3, Chong Qiao, Y. R. Guo, S. Y. Wang, Ming Xu,, Xiangshui Miao, C. Z. Wang, and K. M. Ho, Appl. Phys. Lett. 114, 071901 (2019)
(22) Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, IEEE Electron Device Letters 40, 1068 (2019)
(23) Strong interface scattering induced low thermal conductivity in Bi-based GeTe/Bi2Te3 superlattice-like materials, Yang Zhou, Kaijin Huang, Lingjun Zhou, Xiaomin Cheng, Ming Xu, Hao Tong* and Xiangshui Miao, RSC Adv., 9, 9457-9461(2019)
(24) Ab Initio Simulation of Ta2O5: A high symmetry ground state phase with application to interface calculation, Jun-Hui Yuan, Kan-Hao Xue*, Qi Chen, Leonardo R. C. Fonseca, and Xiang-Shui Miao, Annalen der Physik 531, 1800524 (2019)
(25) Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation, Hu S., Li Y., Cheng L., Wang Z., Chang T., Sze S.M., Miao X, IEEE Electron Device Letters, Volume: 40 , Issue: 2 , 200 - 203, (2019 )
(26) The Structure of Phase-Change Chalcogenides and Their High-Pressure Behavior, Kailang Xu, Xiangshui Miao, Ming Xu, Physica Status Solidi - Rapid Research Letters 1800506 ( 2019)
(27) Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting, Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao, Journal of Materials Science 54, 11485 (2019)
(28) Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap, Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao, Journal of Physical Chemistry Letters 10, 4455 (2019)
(29) Reversible modulation of photoenergy in Sm-doped (K0.5Na0.5)NbO3 transparent ceramics via photochromic behavior, Jinfeng Lin, Yang Zhou, Qiling Lu, Xiao Wu*, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun, Journal of Materials Chemistry A 7, 19374 (2019).
(30) Oxygen migration around the filament region in HfOx memristors, Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao, AIP Advances 9, 105007 (2019)
(31) Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder, Jejune Park, Kan-Hao Xue, Mireille Mouis, François Triozon, and Alessandro Cresti*, Physical Review B 100, 235403 (2019)
(32) An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems, Nian Duan, Yi Li*, Hsiao-Cheng Chiang, Jia Chen, Wen-Qian Pan, Ya-Xiong Zhou, Yu-Chieh Chien, Yu-Hui He, Kan-Hao Xue, Gang Liu, Ting-Chang Chang*, and Xiang-Shui Miao*, Nanoscale 11, 17590 (2019)
(33) Self-compliance characteristics and switching degradation in TaOx-based memristors, Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao, Applied Physics Express 12, 104003 (2019)
(34) Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOₓ Memristive Synapses, Shi-Jie Li , Bo-Yi Dong, Biao Wang, Yi Li , Hua-Jun Sun, Yu-Hui He, Nuo Xu , and Xiang-Shui Miao, IEEE Transactions on Electron Devices, 66, 810 (2019).
(35) Optimal Tuning of Memristor Conductance Variation in Spiking Neural Networks for Online Unsupervised Learning, Bowei Chen, Hui Yang, Fuwei Zhuge, Yi Li , Ting-Chang Chang ,Yu-HuiHe , Weijian Yang, Nuo Xu, and Xiang-Shui Miao IEEE Transactions on Electron Devices, 66 (6), 2844 (2019)
(36) Gate Modulation of Excitatory and Inhibitory Bilingual Synaptic Plasticity in a Low-Temperature Polysilicon Thin Film Synaptic Transistor, Nian Duan, Yi Li*, Hsiao-Cheng Chiang, Shin-Ping Huang, Kang-Sheng Yin, Jia Chen, Chung-I Yang, Ting-Chang Chang*, and Xiang-Shui Miao*, ACS Applied Electronic Materials, 1(1), 132-140,(2019).
(37) Controllable and Stable Quantized Conductance States in the Pt/HfOx/ITO Memristor, Wuhong Xue†, Yi Li†, Gang Liu*, Zhuorui Wang, Wen Xiao, Kemin Jiang, Zhicheng Zhong, Shuang Gao*, Jun Ding, Xiangshui Miao, Xiao-Hong Xu*, and Run-wei Li*, Advanced Electronic Materials, DOI: 10.1002/aelm.201901055 (2019).
(38) Thorough understanding of retention time of Z2FET memory operation，Meng Duan, C. Navarro, B. Cheng, F. Adamu-Lema, Xingsheng Wang, Vihar P. Georgiev, F. Gamiz, C. Miller, S. Amoroso and Asen Asenov, IEEE Transactions on Electron Devices, Vol. 66, No. 1, pp. 383–388 ( 2019).
(39) ZrO2 Ferroelectric FET for Non-volatile Memory Application, Huan Liu，Chengxu Wang, Genquan Han, Jing Li, Yue Peng, Yan Liu, Xingsheng Wang, Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao, IEEE Electron Device Letters, vol.40 no.9, pp.1419-1422 ( 2019).
(40) Direct observation of partial disorder and zipperlike transition in crystalline phase change materials. Min Zhu*, Kun Ren, Long Liu, Shilong Lv, Xiangshui Miao, Ming Xu*, & Zhitang Song*, Physical Review Materials 3(3),033603, (2019).
(41) Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6. Zhenhai Yu#, Wei Xia#, Kailang Xu#, Ming Xu*, Hongyuan Wang, Xia Wang, Na Yu, Zhiqiang Zou, Jinggeng Zhao*, Lin Wang, Xiangshui Miao, & Yanfeng Guo*, The Journal of Physical Chemistry C 123(22),13885-13891, (2019).
(42) Stabilizing amorphous Sb by adding alien seeds for durable memory materials. M. Xu, B. Li, K. Xu, H. Tong, X. Cheng, Ming Xu*, & Xiangshui Miao, Phys Chem Chem Phys 21(8),4494-4500, (2019).
(43) Understanding CrGeTe3: an abnormal phase change material with inverse resistance and density contrast. Meng Xu#, Yanrong Guo#, Zhenhai Yu#, Kailang Xu, Chao Chen, Hao Tong, Xiaomin Cheng, Ming Xu*, Songyou Wang, C. Z. Wang, Kai-Ming Ho, & Xiangshui Miao, Journal of Materials Chemistry C 7(29),9025-9030, (2019).
(44) Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice-Like Phase-Change Materials, Lingjun Zhou, Zhe Yang, Xiaojie Wang, Hang Qian, Ming Xu, Xiaomin Cheng, Hao Tong,* and Xiangshui Miao*,Advanced Electronic Materials, 1900781, 2019.
(45) Ultra-low Program Current and Multilevel Phase Change Memory for High Density Storage Achieved by a Low Current SET Pre-operation, Mingze He, Da He, Hang Qian, Qi Lin, Daixing Wan, Xiaomin Cheng, Ming Xu, Hao Tong*, Xiangshui Miao, IEEE Electron Device Lett., 40(10), 1595, 2019.
（45）Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment, Li He, Huishan Wang, Lingxiu Chen, Xiujun Wang, Hong Xie, Chengxin Jiang, Chen Li, Kenan Elibol, Jannik Meyer, Kenji Watanabe, Takashi Taniguchi, Zhangting Wu,Wenhui Wang, Zhenhua Ni, Xiangshui Miao, Chi Zhang, Daoli Zhang, Haomin Wang, Xiaoming Xie, NATURE COMMUNICATIONS, 10, 2815 (2019)
2018
(1) Improved LDA-1/2 method for band structure calculations in covalent semiconductors, Kan-Hao Xue*, Jun-Hui Yuan, Leonardo R.C. Fonseca , Xiang-Shui Miao, Computational Materials Science, 153, 493 (2018)
(2) GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides, Jun-Hui Yuan , Qi Chen , Leonardo R C Fonseca , Ming Xu , Kan-Hao Xue* and Xiang-Shui Miao, Journal of Physics Communications, 2, 105005 (2018)
(3) Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory，Hao-Xuan Zheng, Ting-Chang Chang*, Kan-Hao Xue*, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze, IEEE Electron Device Letters 39, 6, 815 (2018)
(4)Theoretical investigation of the Ag filament morphology in conductive bridge random access memories, Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang and Xiang-Shui Miao*, Journal of Applied Physics, 124, 152125 (2018)
(5)Model of dielectric breakdown in hafnia-based ferroelectric capacitors, Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang and Xiang-Shui Miao*, Journal of Applied Physics, 124, 024103 (2018)
(6)Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation，LinLv,ZhishanLi,Kan-HaoXue*,YunjunRuan,XiangAo,HouzhaoWan,XiangshuiMiao,BaoshunZhang,JianjunJiang,ChundongWang*,Kostya (Ken)Ostrikove,Nano Energy,Volume 47, Pages 275-284(2018)
(7)Oxygen vacancy chain and conductive filament formation in hafnia, Kan-Hao Xue* and Xiang-Shui Miao*, Journal of Applied Physics,123, 161505 (2018)
(8)Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations,Junhui Yuana, Niannian Yu, Jiafu Wang, Kan-Hao Xue*, and Xiangshui Miao, Applied Surface Science 436, 919–926 (2018)
(9)Impact of Ionization Equilibrium on Electrokinetic Flow of Weak Electrolytes in Nanochannels，Ji Ziwei; Huang Zhuo; Chen Bowei; He Yuhui*; Tsutsui Makusu*; Miao Xiangshui，Nanotechnology,29, 295402(2018)
(10)Increasing the atomic packing efficiency of phase-change memory glass to reduce the density change upon crystallization,Qianqian Wu, Meng Xu, Kailang Xu, Hang Qian, Hao Tong, Xiaomin Cheng, Liangcai Wu, Ming Xu,* and Xiangshui Miao*，Advanced Electronic Materials, 4, 1800127(2018）
(11)Pressure-induced isostructural phase transition and charge transfer in superconducting FeSe, Zhenhai Yu, Ming Xu, Zhipeng Yan, Hao Yan, J. Zhao, U. Patel, D. L. Brewe, S. M. Heald, J. Ma, Y. Guo, K. Yang, Z. Xiao, Lin Wang*, Journal of Alloys and Compounds, 767, 811-819 (2018)
(12)Evolution of short- and medium-range order in the melt-quenching amorphization of Ge2Sb2Te5,Chong Qiao, Y. R. Guo, F. Dong, J. J. Wang, H. Shen, S. Y. Wang*,Ming Xu*,X. S. Miao, Y. X. Zheng, R. J. Zhang,L. Y. Chen, C. Z. Wang and K. M. Ho,J. Mater. Chem. C, 6, 5001--5011(2018)
(13)Structural signature and transition dynamics of Sb2Te3 melt upon fast cooling,Y. R. Guo, F. Dong, C. Qiao, J. J. Wang, S. Y. Wang*,Ming Xu*,Y. X. Zheng, R. J. Zhang, L. Y. Chen, C. Z. Wang and K. M. Ho,Phys. Chem. Chem. Phys,20, 11768--11775(2018)
(14)Structural disorder in the high-temperature cubic phase of GeTe.Ming Xu, Zhenyu Lei,Junhui Yuan, Kanhao Xue*,Yanrong Guo, Songyou Wang*,Xiangshui Miao and Riccardo Mazzarello,RSC Advances, 8, 17435 – 17442(2018)
(15)Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy,F. Dong, Y. R. Guo, C. Qiao, J. J. Wang, H. Shen, W. S. Su,, Y. X. Zheng, R. J. Zhang, L. Y. Chen, S. Y. Wang*, X. S. Miao & M. Xu*, Scientific Reports,8, 9605(2018)
(16)Efficient implementation of Boolean and full adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing, Zhuo-Rui Wang, Yi Li*, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang*, Kan-Hao Xue, Simon M. Sze, Xiang-Shui Miao, IEEE Transactions on Electron Devices,Volume: 65 , Issue: 10, 4659 - 4666(2018).
(17)Reconfigurable logic in nanosecond Cu/GeTe/TiN filamentary memristors for energy-efficient in-memory computing, Miaomiao Jin, Long Cheng, Yi Li*, Siyu Hu, Ke Lu, Jia Chen, Nian Duan, Zhuorui Wang, Yaxiong Zhou, Ting-Chang Chang, and Xiangshui Miao, Nanotechnology, 29, 385203 (2018)
(18)Boolean and sequential logic in a one-memristor-one-resistor (1M1R) structure for in-memory computing, Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Chen, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Advanced Electronic Materials, 1800229 (2018)
(19)Diverse spike-timing dependent plasticity based on multilevel HfOx memristor for neuromorphic computing, Ke Lu, Yi Li*, Wei-fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao, Applied Physics A. Materials Science & Processing, 124:438 (2018)
(20)Memcomputing: fusion of memory and computing,LIYi, ZHOUYaxiong, WANGZhuorui& MIAOXiangshui,SCIENCE CHINA Information Sciences June 2018, Vol. 61,060424(2018)
(21)Linear and nonlinear spin-wave dynamics in ultralow-damping microstructured Co2FeAl Heusler waveguide, Sheng Wang, Junjia Ding, Xiawei Guan,Matthias B. Jungfleisch, Zhizhi Zhang, Xiaojie Wang, Wei Gu, Yunlai Zhu, John E. Pearson, Xiaomin Cheng*, Axel Hoffmann, and Xiangshui Miao, Appl. Phys. Lett. 113, 232404 (2018)
(22)Gold fillings unravel the vacancy role in the phase transition of GeTe, Feng JL, Xu M, Wang XJ, Lin Q, Cheng XM*, Xu M*, Tong H, Miao XS,AppliedPhysicsLetters, 112( 7), 071902(2018)
(23)Performance enhancement of TaOx resistive switching memory using graded oxygen content，B. Wang, K. H. Xue, H. J. Sun, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao，Appl. Phys. Lett. 113, 183501 (2018)
(24)Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering，Rui Guo, Yaxiong Zhou, Lijun Wu, Zhuorui Wang,Zhishiuh Lim, Xiaobing Yan, Weinan Lin, Han Wang, Herng Yau Yoong, Shaohai Chen, Ariando, Thirumalai Venkatesan, John Wang, Gan Moog Chow, Alexei Gruverman, Xiangshui Miao*,Yimei Zhu*,Jingsheng Chen*，ACS APPLIED MATERIALS & INTERFACES, 10, 15, 12862-12869(2018)
(25)Synaptic Suppression Triplet-STDP Learning Rule Realized in Second-Order Memristors, Yang R*, Huang HM, Hong QH, Yin XB, Tan ZH, Shi T, Zhou YX, Miao XS, Wang XP*, Mi SB,Jia CL, Guo X*,AdvancedFunctionalMaterials, 28, 5, 1704455(2018)
(26) Self-screening induced abnormal stability of ferroelectric phase in GeTe ultrathin films, Xiaojie Wang, Lingjun Zhou, Jinlong Feng, Sheng Wang, Hang Qian, Hao Tong*and Xiangshui Miao, Appl. Phys. Lett. 113, 232903 (2018)
(27)Dual-Layer Selector With Excellent Performancefor Cross-Point Memory Applications,Qi Lin , Yi Li , Ming Xu, Qu Cheng, Hang Qian, Jinlong Feng, Hao Tong*and Xiangshui Miao*,IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 4,496-499(2018)
(28)Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices, Liu N, Yan P, Li Y, Lu K, Sun HJ*, Ji HK, Xue KH, Miao XS,AppliedPhysicsA-MaterialsScience& Processing, 124, 2, 143(2018)
(29)Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement,Qian H, Tong H*, He MZ, Ji HK, Zhou LJ, Xu M, Miao XS,Scientific Reports,8, 486(2018)
2017
(1)The impact of membrane surface charges on the ion transport in MoS2nanopore power generators，Zhuo Huang,Yan Zhang,Tomoki Hayashida, Ziwei Ji,Yuhui He,Makusu Tsutsui,Xiang Shui Miao and Masateru Taniguchi，Applied Physics Letters，111, 263104 (2017)
(2)Reprogrammable logic in memristivecrossbar for in-memory computing,Long Cheng, Mei-Yun Zhang, Yi Li, Ya-Xiong Zhou, Zhuo-Rui Wang,Si-Yu Hu, Shi-Bing Long, Ming Liu and Xiang-Shui Miao,J. Phys. D: Appl. Phys. 50,505102 (2017)
(3)Manipulation of dangling bonds ofinterfacial states coupled inGeTe-rich GeTe/Sb2Te3 superlattices,Zhe Yang, Ming Xu, Xiaomin Cheng, Hao Tong*,Xiangshui Miao,ScientificReports,7,17353(2017)
(4)Effects of Thickness and Temperature on Thermoelectric Properties of Bi2Te3-Based Thin Films,Yang DD, Tong H , Zhou LJ, Miao XS,ChinesePhysicsLetters, 34, 12, 127301 (2017)
(5)Color printing enabled by phase change materials on paper substrate,Hong-Kai Ji, Hao Tong, Hang Qian, Nian Liu, Ming Xu, and Xiang-Shui Miao*,AIP Advances 7, 125024 (2017)
(6)Filament-to-dielectric band alignments in TiO2 and HfO2 resistiveRAMs,Ze-Han Wu,Kan-Hao Xue,Xiang-Shui Miao,J Comput Electron,16,1057–1065 (2017)
(7)Correlation analysis between the current fluctuation characteristicsand the conductive filament morphology of HfO2-based memristor,Yi Li, Kang-Sheng Yin,Mei-Yun Zhang,Long Cheng,Ke Lu, Shi-Bing Long,Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu and Xiang-Shui Miao, Applied Physics Letters,111, 213505 (2017)
(8)Impact of Pressure on the Resonant Bonding in Chalcogenides, Ming Xu, Stefan Jakobs, Riccardo Mazzarello, Ju-Young Cho, Zhe Yang,Henning Hollermann, Dashan Shang, Xiangshui Miao, Zhenhai Yu,Lin Wang,and Matthias Wuttig,J. Phys. Chem. C, 121, 25447-25454(2017)
(9)Femtosecond Laser-Induced Magnetization Reversal Domain of Co-Sublattice in TbCo Film, Cheng Weiming, Li Xing, Hui Yajuan,Kaifeng Dong, Haiwei Wang, Jincai Chen,Changsheng Xieand Xiangshui Miao, IEEE TRANSACTIONS ON MAGNETICS, Vol. 53, No. 11, 4301205 (2017)
(10)Electrokinetic Analysis of Energy Harvest from Natural Salt Gradients in Nanochannels,He YH, Huang Z, Chen BW, Tsutsui M, Miao XS, Taniguchi M, SCIENTIFIC REPORTS, Vol. 7, 13156 (2017)
(11)Positive dependence of thermal conductivity on temperature in GeTe/Bi2Te3 superlattices: the contribution of electronic and particle wave lattice thermal conductivity, Tong H, Lan F, Liu YJ, Zhou LJ, Wang XJ, He Q, Wang KZ, Miao XS,JOURNAL OF PHYSICS D-APPLIED PHYSICS,Volume: 50, Issue: 35, 355102 (2017)
(12)Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions, He WF, Sun HJ*, Zhou YX, Lu K, Xue KH, Miao XS,SCIENTIFIC REPORTS, Volume 7, 10070 (2017)
(13)Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by Pt insertion, Huang T, Cheng XM*, Guan XW, Wang S, Miao XS,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Volume: 28, Issue: 13, 9606-9611 (2017)
(14)Stability, electronic and thermodynamic properties of aluminene from first-principles calculations, Yuan JH, Yu NN, Xue KH*, Miao XS,APPLIED SURFACE SCIENCE, Volume: 409, 85-90 (2017)
(15)Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials, Adam AAE*, Cheng XM, Abuelhassan HH, Miao XS,SOLID STATE COMMUNICATIONS, Volume: 259, 19-23 (2017)
(16)Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array, Zhou YX, Li Y, Su YT, Wang ZR, Shih LY, Chang TC, Chang KC, Long SB,Sze SM, Miao XS*, NANOSCALE, Volume: 9, Issue: 20, 6649-6657 (2017)
(17)Transport mechanism of the magnetoresistance effects in Ta/CoFe2O4 nanostructures, Hui YJ, Cheng WM*, Zhang ZB, Wang HW, Xie CS, Miao XS,APPLIED PHYSICS LETTERS, Volume: 110, Issue: 19, 192404 (2017)
(18)Laser induced ultrafast magnetization reversal in TbCo film, Cheng WM, Li X, Wang HW, Cheng XM, Miao XS,AIP ADVANCES, Volume: 7, Issue: 5, 056018 (2017)
(19)Short channel effects on electrokinetic energy conversion in solid-state nanopores, Zhang Y, He YH, Tsutsui M, Miao XS, Taniguchi M,SCIENTIFIC REPORTS, Volume: 7, 46661 (2017)
(20)Combination of Cation Exchange and Quantized Ostwald Ripening for Controlling Size Distribution of Lead Chalcogenide Quantum Dots, Zhang CW, Xia Y, Zhang ZM, Huang Z, Lian LY, Miao XS, Zhang DL, Beard MC,Zhang JB, CHEMISTRY OF MATERIALS, Volume: 29, Issue: 8, 3615-3622 (2017)
(21)Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory, Wang ZR, Su YT, Li Y, Zhou YX, Chu TJ, Chang KC, Chang TC, Tsai TM,Sze SM, Miao XS*, IEEE ELECTRON DEVICE LETTERS, Volume: 38, Issue: 2, 179-182(2017)
(22)Variations of Local Motifs around Ge Atoms in Amorphous GeTe Ultrathin Films, Ma P, Tong H, Huang T, Xu M, Yu NN, Cheng XM, Sun CJ, Miao XS*,JOURNAL OF PHYSICAL CHEMISTRY C, Volume: 121, Issue: 2, 1122-1128 (2017)
(23)Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory, Xue KH, Fonseca LRC, Miao XS,RSC ADVANCES, Volume: 7, Issue: 35, 21856-21868 (2017)
(24)Ideal strength and elastic instability in single-layer 8-Pmmn borophene, Yuan JH, Yu NN, Xue KH, Miao XS,RSC ADVANCES, Volume: 7, Issue: 14, 8654-8660 (2017)
2016
(1)Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar, Li Y, Zhou YX, Xu L, Lu K, Wang ZR, Duan N, Jiang L, Cheng L, Chang TC, Chang KC, Sun HJ, Xue KH, Miao XS*,ACS APPLIED MATERIALS & INTERFACES, Volume: 8, Issue: 50, 34559-34567 (2016)
(2)Non-binary colour modulation for display device based on phase change materials,Hong-Kai Ji1†, Hao Tong†, Hang Qian, Ya-Juan Hui, Nian Liu, Peng Yan, Xiang-Shui Miao*,Scientific Reports,Volume: 6, Article Number:39206 (2016)
(3)Low work function of crystalline GeTe/Sb2Te3 superlattice-like films induced by Te dangling bonds,Qian H,Tong H,Zhou L J, Yan BH, Ji HK,Xue KH,Cheng XM, Miao XS, JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49,Issue: 49,Article Number: 495302 (2016)
(4)Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices,Xue-Bing Yin, Rui Yang, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, Xin Guo,Physical Chemistry Chemical Physics, Volume 18, Issue 46, Pages 31796-31802 (2016)
(5)A Microstructurally Resolved Model for Li-S Batteries Assessing the Impact of the Cathode Design on the Discharge Performance,Vigneshwaran Thangavel, Kan-Hao Xue, Youcef Mammeri, Matias Quiroga, Afef Mastouri, Claude Guéry, Patrik Johansson, Mathieu Morcrette, Alejandro A. Franco,Journal of The Electrochemical Society, Volume 163, Issue 13, Pages A2817-A2829 (2016)
(6)Conductance quantization in an AgInSbTe-based memristor at nanosecond scale, L Jiang，L Xu，JW Chen，P Yan，KH Xue，HJ Sun, XS Miao, Applied Physics Letters, 109(15):153506 (2016)
(7)Temperature dependence of SET switching characteristics in phase-change memory cells,He Q,Li Z,Liu C,Meng XR,Peng JH,Lai ZB,Miao XS,JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 49 Issue: 38 Article Number: 385101, (2016)
(8)Spin-wave propagation steered by electric field modulated exchange interaction,Wang S, Guan XW, Cheng XM, Lian C, Huang T, Miao XS, SCIENTIFIC REPORTS,Volume: 6,Article Number: 31783 (2016)
(9)Effect of Annealing Temperature on the Microstructure and Magnetic Properties of MnGa Films,Cheng WM, Jiang SZ, Xu WC, Hui YJ, Wang HW, Chen JC, Miao XS, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM,Volume: 29,Issue: 8,Pages: 2035-2039(2016)
(10)Fabrication process not limited by the lithography resolution of lateral phase change memory,Lan T, Zhou WL, Miao XS,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,Volume: 50,Pages: 1-6 (2016)
(11)Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input,Lu B, Cheng XM, Feng JL, Guan XW, Miao, XS,APPLIED PHYSICS LETTERS,Volume: 109,Issue: 2,Article Number: 023506(2016)
(12)Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures,Hui YJ,Cheng WM, Zhang ZB, Ji HK,Cheng XM, You L, Miao XS,APPLIED PHYSICS EXPRESS,Volume: 9,Issue: 7,Article Number: 073006(2016)
(13)Salt-Gradient Approach for Regulating Capture-to-Translocation Dynamics of DNA with Nanochannel Sensors,He YH, Tsutsui M, Scheicher RH, Miao XS, Taniguchi M,ACS SENSORS,Volume: 1,Issue: 6,Pages: 807-816(2016)
(14)Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,Guan XW, Cheng XM, Wang S, Huang T, Xue KH, Miao XS,JOURNAL OF ELECTRONIC MATERIALS,Volume: 45 Issue: 6 Pages: 3162-3166(2016)
(15)Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,Guan XW, Cheng XM, Huang T, Wang S, Xue KH, Miao XS, JOURNAL OF APPLIED PHYSICS,Volume: 119 Issue: 13 Article Number: 133905(2016)
(16)A hybrid memristor-CMOS XOR gate for nonvolatile logic computation,Zhou YX, Li Y, Xu L, Zhong SJ, Xu RG, Miao XS, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,Volume: 213 Issue: 4 Pages: 1050-1054(2016)
(17)Pr-based metallic glass films used as resist for phase-change lithography,Luo T, Li Z, He Q, Miao XS, OPTICS EXPRESS,Volume: 24 Issue: 6 Pages: 5754-5762(2016)
(18)Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain,WeiZhou, Zhen Li, Qiang He, Xiang-shui Miao,International Journal of Heat and Mass Transfer,Volume: 94, 301-305(2016).
(19)Rapid thermal evaporation of Bi2S3 layer for thin film photovoltaics,Song HB, Zhan XJ, Li DB, Zhou Y, Yang B, Zeng K, Zhong J, Miao XS, Tang J, SOLAR ENERGY MATERIALS AND SOLAR CELLS,Volume: 146 Pages: 1-7(2016)
(20)Effect of the chalcogenide element doping on the electronic properties of Co2FeAl Heusler Alloys,Huang T, Cheng XM, Guan XW, Miao XS, Journal of Electronic Materials,Volume: 45 Issue: 2 Pages: 1028-1034 (2016)
(21)Charged defects-induced resistive switching in Sb2Te3 memristor, J. J. Zhang, N. Liu, H. J. Sun, P. Yan, Y. Li, S. J. Zhong, S. Xie, R. J. Li, X. S. Miao, Journal of Electronic Materials,Volume: 45 Issue: 2 Pages: 1154-1159(2016)
(22)Preparation and Magnetic Properties of FePt Nanodot Arrays Sputtering on AAO Templates,Cheng WM, Zhou Y, Guan XW, Hui YJ, Wang S, Miao XS, MATERIALS AND MANUFACTURING PROCESSES,Volume: 31 Issue: 2 Pages: 173-176(2016)
(23)One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates，Jiang SL, Zeng YK, Zhou WL, Miao XS, Yu Y, SCIENTIFIC REPORTS，Volume: 6，Article Number: 19313（2016）
2015
(1)Impact of Water-Depletion Layer on Transport in HydrophobicNanochannels,Yuhui He, Makusu Tsutsui,Xiang Shui Miao and Masateru Taniguchi,Analytical Chemistry,Volume: 87， Issue: 24 Pages: 12040-12050 (2015)
(2)Optimisation of Write Performance of Phase-Change Probe Memory for Future Storage Applications，Wang L, Wen J, Yang CH, Gai S, Miao XS, NANOSCIENCE AND NANOTECHNOLOGY LETTERS，Volume: 7 Issue: 11 Pages: 870-878（2015）
(3)Improvement of the Half-metallic Stability of Co2FeAl Heusler Alloys by GeTe-doping,Ting Huang, Xiaomin Cheng, Xiawei Guan, and Xiangshui Miao, IEEE Magn., 51(11), 2600504 (2015)
(4)Influenceof Cu Underlayer on the High-FrequencyMagnetic Properties of FeCoSiO Thin Films,G. D. Lu, X. S. Miao, W. M. Cheng, X. F. Huang, L. Yang, and L. Q. Pan, IEEE Magn., 51(11),12801504(2015)
(5)Pressure-induced novel compounds in the Hf-O system from first-principles calculations,Jin Zhang, Artem R. Oganov, Xinfeng Li, Kan-Hao Xue, Zhenhai Wang, and Huafeng Dong, Physical Review B 92, 184104 (2015)
(6)Modeling the AgInSbTe memristor,J. T. Yu, Y. Li, X. M. Mu, J. J. Zhang, X. S. Miao, and S. N. Wang, Radioengineering, 24(3), 808-813(2015).
(7)Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe, Jindong Liu, Xiaomin Cheng, Fei Tong and Xiangshui Miao, Journal of Alloys and Compounds, Vol.650, 70-74 (2015)
(8)Threshold-Voltage Modulated Phase Change Heterojunction for Application of High Density Memory, Baihan Yan, Hao Tong, Hang Qian, and Xiangshui Miao, Applied Physics Letters,107,133506(2015)
(9)Simple square pulses forimplementing spike-timing-dependentplasticity in phase-change memory，Yingpeng Zhong, Yi Li, Lei Xu, and Xiangshui Miao,Physica Status Solidi - Rapid Research Letters，Vol.9, No. 7, 414–419 (2015)
(10)Thickness dependence and magnetization behavior of Mn-dopedGeTe phase change materials，Adam Abdalla Elbashir Adam,Xiaomin Cheng,Xiangshui Miao,Journal ofMaterialsScience: Materials inElectronics,26:5202–5208(2015)
(11)Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices,P. Yan, Y. Li, Y. J. Hui, S. J. Zhong, Y. X. Zhou, L. Xu, N. Liu, H. Qian, H. J. Sun, and X. S. Miao,Applied Physics Letters,107, 083501 (2015)
(12)Disorder-induced anomalously signed Hall effect in crystalline GeTe/Sb2Te3superlattice-like materials,H. Tong, N. N. Yu, Z. Yang, X. M. Cheng, and X. S. Miao,Journal of Applied Physics,118, 075704 (2015)
(13)Work function contrast and energy band modulation between amorphous andcrystalline Ge2Sb2Te5 films，H. Tong, Z. Yang, N. N. Yu, L. J. Zhou, and X. S. Miao,Applied Physics Letters,107, 082101 (2015)
(14)Transient Structures and PossibleLimits of Data Recording inPhase-Change Materials，Jianbo Hu, Giovanni M. Vanacore,Zhe Yang,Xiangshui Miao, and Ahmed H. Zewail，ACS Nano，9(7), 6728-6737 (2015)
(15)Asymmetric structure with high electric–thermal conversion efficiency for nanoscalephase change memory based on three-dimensional simulation,Tian Lan, Jinjie Sun, Xiao Min Cheng, Jiao Zhou, Xiangshui Miao,Micro & Nano Letters, Vol. 10, Issue. 2, 76–80 (2015)
(16)Exposure strategy and crystallizationofGe-Sb-Te thin film by masklessphase-change lithography,Ri Wen Ni,Bi Jian Zeng,Jun Zhu Huang,Teng Luo,Zhen Li,Xiang Shui Miao,Optical Engineering 54(4), 045103 ( 2015)
(17)Investigation of the Hydrogen Silsesquioxane (HSQ) ElectronResist as Insulating Material in Phase Change Memory Devices,JiaoZhou, HongkaiJi, TianLan, JunbingYan,WenliZhou, and XiangshuiMiao,Journal ofElectronicMaterials, Vol. 44, No. 1,235-243 (2015)
(18)Local order origin of thermal stability enhancement in amorphous Ag doping GeTe,L. Xu, Y. Li, N. N. Yu, Y. P. Zhong, and X. S. Miao,Applied Physics Letters,106,031904(2015)
(19)Novel multilayer structure design of metallic glassfilm deposited Mgalloy with superior mechanical properties and corrosion resistance,GeWu,YongLiu,ChangLiu,Qing-HuaTang,Xiang-ShuiMiao,JianLu,Intermetallics,62,22-26(2015)
(20)16Boolean logics in three stepswith two anti-seriallyconnected memristors, YaxiongZhou, Yi Li, Lei Xu, ShujingZhong, Huajun Sun,andXiangshui Miao,Applied Physics Letters,106,233502(2015)
(21)Associative Learning with Temporal Contiguity in aMemristive Circuit for Large-Scale Neuromorphic Networks,Yi Li,Lei Xu, Ying-Peng Zhong, Ya-XiongZhou , Shu-JingZhong , Yang-Zhi Hu , Leon O. Chua, and Xiang-ShuiMiao, Advanced Electronic Materials,1(8), 1500125 (2015)
(22)Thickness dependence of magnetic properties in La–Co substitutedstrontium hexaferritefilms with perpendicular anisotropy, Yajuan Hui , Weiming Cheng , Peng Yan , Jincai Chen , Xiangshui Miao,Journal of Magnetism and Magnetic Materials,390,56–60 (2015)
2014
(1)Interface structure and magnetism of CoFe/A1-FePt films with perpendicular magnetic anisotropy, X. W. Guan,X. M. Cheng,T. Huang andX. S. Miao,Journal of AppliedPhysics,116, 213910 (2014) A类
(2)Structure and phonon behavior of crystalline GeTe ultrathin film,N.N. Yu, H. Tong, X. S. Miao,Applied Physics Letters, 105, 121902 (2014) T2类
(3)Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film, F. Tong，J. D Liu， Xiaomin Cheng， J.H. Hao，G.Y. Gao，H. Tong，X.S. Miao, Thin Solid Films, 568, 70-73 (2014) A类
(4)Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials, Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 117(4), 2115-2119 (2014) B类
(5)Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film, T. Huang, X. M. Cheng, X. W. Guan and X. S. Miao, IEEE Trans. On Magnetics, 50(1), 4400904 (2014)， A类
(6)Polarization-based multiple-bit optical data storage，Zeng Bijian, Ni Riwen, Huang Junzhu, Li Zhen, Miao Xiangshui，Journal of Optics, 16, 125402 ( 2014) B类
(7)La-Co pair substituted strontium ferrite films with perpendicular magnetization，Yajuan Hui, Weiming Cheng, Sihai Zhao, Xiaoming Cheng，Xiangshui Miao， IEEE Transactions on Magnetics，50(7), 2800904 (2014) A类
(8)Surface band tuning of Bi2Te3 topological insulator thin films by gas absorption, Liu N, Ju C, Cheng XM, Miao XS, Journal of Electronic Materials, 43(9), 3105-3109 (2004) A类
(9)Effect of Heat Treatments on the Structural and Magnetic Properties of La-Co Substituted Strontium Ferrite Films,Hui YJ,Cheng WM,Lin GQ,Miao XS,JOURNAL OF ELECTRONIC MATERIALS, 43(9),3640-3645 (2014) A类
(10)Spin-glass behavior and anomalous magnetoresistance in ferromagnetic Ge1-xFexTe epilayer,Liu JD,Cheng XM, Tong F,Miao XS,Journal of Applied Physics,116(4), 043901(2014) A类
(11)CIGS Thin Films for Cd-Free Solar Cells by One-Step Sputtering Process,Xiang J,Huang X,Lin GQ,Tang J,Ju C, Miao XS,JOURNAL OF ELECTRONIC MATERIALS, 43(7),2658-2666,2014 A类
(12)Metallic resist for phase-change lithography,Zeng BJ,Huang JZ,Ni RW,Yu NN,Wei W,Hu YZ,Li Z,Miao XS,Scientific Reports （Nature Publishing Group),volume 4,5300 (2014) T2类
(13)Continuous controllable amorphization ratio of nanoscale phase change memory cells,Q. He, Z. Li, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao,Applied Physics Letters,104, 223502 (2014) T2类
(14)Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems, Y. Li, Y. P. Zhong,J.J. Zhang,L. Xu,Q. Wang, H. J. Sun,H. Tong, X. M. Cheng,X. S. Miao,Scientific Reports （Nature Publishing Group),volume 4,4906 (2014) T2类
2013
(1)Nonvolatile‘AND’‘OR’‘NOT’Boolean Logic Gates Based on Phase-Change Memory,Y. Li, Y. P. Zhong,Y.F.Deng,Y. X. Zhou,L. Xu and X. S. Miao, Journal of Applied Physics,114, 234503,2013 A类
(2)Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F.,LiZ.,Peng J. H., Liu C., Chen W.,Miao X.S.,Applied Physics Letters,103(23),233501, 2013 T2类
(3)Effects of deposition profiles on RF-sputtered Cu(In,Ga)Se2 films at low substrate temperature, Huang X., Miao X.S., Yu N.N., Guan X. W., Applied Surface Science, Volume 287, Pages 257-262, 2013 A类
(4)Inductively coupled plasma etching for phase-change material with superlattice-like structure in phase change memory device,Jiao Zhou,Ying Chen,Wenli Zhou, Xiangshui Miao,ZheYang,Niannian Yu,Hui Liu,Tian Lan,Junbing Yan,Applied Surface Science,Volume 280, Pages 862–867,2013 A类
(5)Phase separation and nanocrystallization behavior above crystallization temperature in Mg–Cu–Y metallic glass thin film,G. Wu,Q.H. Tang,N.N. Yu,X.S. Miao,Thin Solid Films, Volume 545, Pages 38-43, 2013 A类
(6)Nitrogen-induced local spin polarization in graphene on cobalt,Zhongping Chen, LingMiao, XiangshuiMiao,JournalofMagnetismandMagneticMaterials342, Pages144–148, 2013 A类
(7)Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films,Yu N.N.,Tong H.,Zhou J.,Elbashir A.A.,Miao X.S.,Applied Physics Letters,103(6),061910, 2013 T2类
(8)Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5,Li Y.,Zhong Y.P.,Zhang J.J.,Xu X.H.,Wang Q.,XuL,SunH.J.,Miao X.S.,Applied Physics Letters,103(4),043501, 2013 T2类
(9)AgInSbTe memristor with gradual resistance tuning,Zhang J.J.,Sun H.J.,Li Y.,Wang Q.,Xu X.H.,Miao X.S.,Applied Physics Letters,102(18),183513, 2013 T2类
(10)Picosecond amorphization of chalcogenides material: From scattering to ionization,Wang, P.Ju, C., Chen, W,Huang, D.Q, X. S. Miao,Applied Physics Letters,102(11), 112108, 2013 T2类
(11)Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition,Liu, J.D.,Miao, X.S.;Tong, F.;Luo, W.;Xia, Z.C.,Applied Physics Letters,102(10),102402,2013 T2类
(12)Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao,Scientific Reports （Nature Publishing Group),volume3, 1619，2013. T2类
(13)A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip,J.H. Wang,J. Zhou,W.L. Zhou,H. Tong,D.Q. Huang,J.J. Sun,L. Zhang,X.M. Long,Y. Chen,L.W. Qu,X.S. Miao,Solid-State Electronics,Volume 81, Pages 157–162, 2013 B类
(14)Effect of Sputtering Parameters on the Magnetic Properties of SmCo5/Cu Films,W.M.Cheng,H.Hu,Y.F.Dai,X.M.Cheng&X.S.Miao,Materials and Manufacturing Processes,Volume 28,Issue 5,pages505-508,2013 B类
2012:
(1)Electrode Materials for Ge2Sb2Te5-Based Memristors, Wang Q, Sun HJ, Zhang JJ, Xu XH, Miao XS, JOURNAL OF ELECTRONIC MATERIALS,41(12),3417-3422(2012).
(2)Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS,APPLIED PHYSICS LETTERS,Volume: 101,Issue: 14,Article Number: 142107, OCT2012.
(3)A new TiW seedlayer for SmCo5 films with perpendicular magnetic anisotropy, Cheng WM, Liu WW, Wang X, Cheng XM, Miao XS, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,Volume:324, Issue:22, Pages: 3658-3661，NOV 2012.
(4)EffectofCusubstitutiononthemagneticpropertiesofSmCo5 filmwithperpendicularmagneticanisotropy, JOURNAL OF ELECTRONIC MATERIALS, Cheng WM, Dai YF, Hu H, Cheng XM, Miao XS,Volume:41,Issue:8,Pages:2178-2183, AUG 2012.
(5)MagneticmomentsinSmCo5andSmCo5Cufilms, Cheng WM, Zhao SH, Cheng XM, Miao XS, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM,Volume:25,Issue:6,Pages:1947-1950, JUN2012.
(6)Amorphization and amorphous stability of Bi2Te3 chalcogenide films,Ju C,Cheng XM,Miao XS,APPLIED PHYSICS LETTERS,Volume: 100,Issue: 14,Article Number: 142114, APR 2012.
(7)Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure,Long PY,Tong H,Miao XS,APPLIED PHYSICS EXPRESS,Volume: 5,Issue: 3,Article Number: 031201,MAR 2012.
(8)Dynamic switching characteristic dependence on sidewall angle for phase change memory,Long XM,Miao XS,Sun JJ, Cheng XM,Tong H,Li Y,Yang DH,HuangJD,Liu C,SOLID-STATE ELECTRONICS,Volume: 67,Issue: 1, Pages: 1-5,JAN 2012.
(9)王苹,黄冬麒,李震,缪向水，相变存储器单元皮秒测试信号完整性研究，华中科技大学学报(自然科学版)，第40卷,第9期，34-38（2012）
(10)张乐,李震,陈伟,缪向水，基于二分法的混合信号接口板的设计，微电子学与计算机，第04期，67-70（2012）
(11)相变存储器存储单元瞬态电流测量，马翠，李震,彭菊红,缪向水，计算机与数字工程，40卷，2期，130-132页，2012年.
(12)SmCo5垂直磁记录薄膜的研究进展，程伟明,胡浩,戴亦凡,缪向水,信息记录材料，13卷，1期，53-59页，2012年.
2011:
(1)Insulator-metal transition in GeTe/Sb2Te3 multilayer induced by grain growth and interface barrier,Tong H,Miao XS,Yang Z,ChengXM,APPLIED PHYSICS LETTERS,Volume: 99,Issue: 21,Article Number: 212105,NOV 21 2011
(2)Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor,Tong F,Hao JH,Chen ZP,Gao GY,Tong H,Miao XS,APPLIED PHYSICS LETTERS, Volume: 99,Issue: 20,Article Number: 202508,NOV 14 2011
(3)Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition, Tong F,Hao JH,Chen ZP,Gao GY,Miao XS,APPLIED PHYSICS LETTERS,Volume: 99,Issue: 8,Article Number: 081908,AUG 22 2011
(4)Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse,Huang DQ,Miao XS,Li Z,Sheng JJ,Sun JJ,Peng JH,Wang JH,Chen Y,Long XM,APPLIED PHYSICS LETTERS,Volume: 98,Issue: 24,Article Number: 242106,JUN 13 2011
(5)Half-metallicity of wurtzite NiO and w-NiO/ZnO (0001) interface: First principles simulation,Chen ZP,Miao L,Miao XS,AIP ADVANCES,Volume: 1,Issue: 2,Article Number: 022124,JUN 2011
(6)Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping,Zhang DL,Zhang JB,Guo Z,Miao XS,JOURNAL OF ALLOYS AND COMPOUNDS,Volume: 509,Issue: 20,Pages: 5962-5968,MAY 19 2011
(7)Investigation into Texture, Preferential Orientation, and Optical Properties of Zinc Oxide Nanopolycrystalline Thin Films Deposited by the Sol-Gel Technique on Different Substrates,Zhang DL,Huang YP,Zhang JB,Yuan L,Miao XS,JOURNAL OF ELECTRONIC MATERIALS,Volume: 40,Issue: 4,Pages: 459-465,APR 2011
(8)Thermal conductivity of chalcogenide material with superlatticelike structure,Tong H,Miao XS,Cheng XM,Wang H,Zhang L,Sun JJ,Tong F,Wang JH,APPLIED PHYSICS LETTERS,Volume: 98,Issue: 10,Article Number: 101904,MAR 7 2011
(9)Theoretical Investigation of Structural and Magnetic Properties of ZnnSen (n=6-13) Nanoclusters Doped with Manganese Atoms,Zhang DL,Chen LY,Zhang JB,Miao XS,JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Volume: 94,Issue: 3,Pages: 759-764,MAR 2011
(10)SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer,Qu LW,Miao XS,Sheng JJ,Li Z,Sun JJ,An P,Huang JD,Yang DH,Liu C,SOLID-STATE ELECTRONICS,Volume: 56,Issue: 1, Pages: 191-195,FEB 2011
(11)非对称结构相变存储单元制备及性能研究, 鄢俊兵,温学鑫,程晓敏,缪向水,纳米科技, 8卷，1期，16-18页，2011年
(12)非对称结构相变存储单元的三维模拟与分析, 孙巾杰,缪向水,程晓敏,鄢俊兵,计算机与数字工程, 39卷，5期，10-12页，2011年
(13)Al基金属玻璃的研究进展, 汪超，何翠群，缪向水,材料导报, 25卷，专辑17，254-257页， 2011年
(14)基于反常霍尔效应的薄膜磁滞回线测量系统的原理与设计，周卓作，杨晓非，李震，董凯锋，磁性材料及器件，42卷，2期，43-45页,2011年
2010:
(1)Effective method to identify the vacancies in crystalline GeTe,Tong F,Miao XS,Wu Y,Chen ZP,Tong H,Cheng XM,APPLIED PHYSICS LETTERS,Volume: 97,Issue: 26,Article Number: 261904,DEC 27 2010
(2)Microstructure, Morphology, and Ultraviolet Emission of Zinc Oxide Nanopolycrystalline Films by the Modified Successive Ionic Layer Adsorption and Reaction Method,Zhang DL,Zhang JB,Wu QM,Miao, XS,JOURNAL OF THE AMERICAN CERAMIC SOCIETY,Volume: 93,Issue: 10,Pages: 3284-3290,OCT 2010
(3)Influences of Substrate Temperature on Structure, Electrical and Optical Properties of Magnetron Sputtering Ge2Sb2Te5 Films,Sun HJ,Hou LS,Miao XS,Wu YQ,RARE METAL MATERIALS AND ENGINEERING, Volume: 39,Issue: 3,Pages: 377-381,MAR 2010
(4)Growth orientation and shape evolution of colloidal lead selenide nanocrystals with different shapes,Zhang DL, Zhai GM,Zhang JB,Yuan L,Miao XS,Zhu SY, Wang Y,CRYSTENGCOMM,Volume: 12,Issue: 10,Pages: 3243-3248, 2010
(5)Advancements in next-generation memory and photonic devices, Miao XS，Shi TL，Zhang XL，Zhao YD，IEEE NanotechnologyMagazine,Volume:4,Issue: 1,Pages:4-8,MAR 2010
2009:
(1)Microstructure and magnetic properties of Ag/FePt double layer films with different cooling processes,Dong KF,Yang XF,Yan JB,Cheng WM,Cheng XM,Miao XS,Xu XH,Wang F,JOURNAL OF ALLOYS AND COMPOUNDS, Volume: 476, Issue: 1-2,Pages: 662-666,MAY 12 2009
(2)不同退火时间对[Ag/FePt]_(10)多层膜磁性能和微结构的影响,董凯锋，程晓敏，鄢俊兵，程伟明，缪向水，许小红，王芳， 杨晓非, 功能材料，1期，2009
2008
(1)Preparation and magnetic properties of TbFeCo on the porous alumina templates, JB Yan, ZY Li, WM Cheng, KF Dong, XF Yang, GQ Lin, Material Science & Engineering: B, Volume 150, Number 2, Pages:141-144, 2008
(2)Effects of Nd Substitution on Magnetic and Magneto-optical Properties of TbCo/Cr Films,WMCheng,ZYLi,XFYang,F Jin,ZXHuang,GQLinandXMCheng,Journal of Wuhan University of Technology--Materials ScienceEdition,Volume 23, Number 2,Pages:166-168,2008
(3)Effect of Ag Addition on the Microstructure and Magnetic Properties of FePt Thin Films, XMCheng, XF YangKF Dong, ZY Li,Journal of Wuhan University of Technology--Materials ScienceEdition,Volume 23, Number5,Pages:670-674,2008
(4)Pt底层对TbFeCo薄膜磁性能与磁光性能的影响，程伟明，李佐宜，杨晓非，黄致新，鄢俊兵，李震，程晓敏，林更琪，稀有金属材料与工程,37卷，4期，647-649页，2008年
(5)溅射方法对FePt：Ag颗粒膜磁性能及微观结构的影响，程晓敏,杨晓非，董凯峰，李佐宜，功能材料, 39卷，4期，544-546页，2008年
(6)[FePt／Ag]n多层颗粒膜的磁学性能及微观结构，程晓敏，杨晓非，董凯峰，李佐宜, 华中科技大学学报,36卷，9期，37-40页，2008年
(7)多孔氧化铝模板上TbFeCo薄膜的制备及磁性能，鄢俊兵，李佐宜，晋芳，董凯锋，林更琪，功能材料,39卷，7期，1081-1083页，2008年
(8)粒径分布对介质过渡区噪声影响的微磁学分析，李鹏，程晓敏，杨晓非，功能材料,39卷，7期，1095-1098页，2008年
(9)SmCo／Fe系统膜厚对矫顽力与过渡区噪声影响的微磁学模拟，李鹏，杨晓非，程晓敏, 功能材料,39卷，6期，905-908页，2008年
(10)Pt的含量对[Fe／Pt]n多层膜磁性能的影响，董凯锋，杨晓非，鄢俊兵，程伟明，程晓敏，功能材料,39卷，5期，744-746页，2008年
(11)粒径对Co 基记录介质过渡区噪声影响的微磁学分析,李鹏，鄢俊兵，程晓敏，杨晓非，中国有色金属学报,18卷，12期，2185-2189页，2008年
(12)CoCrPt垂直磁记录介质磁化翻转特征的微磁学模拟，李鹏，吴保磊，程晓敏，杨晓非, 中国有色金属学报,18卷，9期，1664-1668页，2008年
(13)超分辨近场结构光磁混合存储介质温度场模拟,程晓敏王昊杨晓非缪向水李震李佐宜光学精密工程,16卷，10期，1800-1804页，2008年
(14)NiFe纳米线磁化反转机制的微磁模拟，董凯锋，杨晓非，鄢俊兵，晋芳，程伟明，程晓敏，磁性材料及器件，39卷，5期，23-25页,2008年
(15)单轴磁晶各向异性薄膜转矩曲线分析, 磁性材料与器件,李震，鄢俊兵，程伟明，王鲜然，39卷，5期，13-15页，2008年
(16)磁记录介质晶粒磁相互作用参数△M及其测量方法,李震，鄢俊兵，程伟明, 磁性材料与器件，39卷，4期，18-21页，2008年
(17)AFM探针热磁写入中薄膜温度场的有限元模拟,鄢俊兵，李佐宜，晋芳，董凯锋，林更琪，磁性材料与器件，39卷，4期，26-28页，2008年
(18)[Fe/Pt]n多层膜中膜层结构对磁性能的影响, 磁性材料与器件,董凯锋，杨晓非，鄢俊兵，程伟明，程晓敏，39卷 2期，15-16页,2008年
二、会议论文：
2016
(1)Y. X. Zhou, Y. Li*, L. Xu, and X. S. Miao*, “Realization of functionally complete Boolean logic based on memristive devices”, 2016 International Workshop on Information Storage/10th International Symposium on Optical Storage (IWIS/ISOS 2016), April 10-13, 2016, Changzhou, China. (Poster)
2015
(2)Yi Li, Xiangshui Miao,Chalcogenide based Memristor for Neuromorphic and Logic Computing,The 1st Sino-German Symposium on Electronic and Memory Materials, Nov 1-5, 2015, Aachen, Germany (Invited)
(3)Y. Li, L. Xu, Y. X. Zhou, and X. S. Miao, Realization of associative learning based on spike timing dependent plasticity of memristive synapse, The 15th Non-Volatile Memory Technology Symposium (NVMTS 2015), Beijing, China, October 12-14, 2015.
(4)闫鹏，李祎，孙华军，缪向水，CuO薄膜忆阻材料制备与导电机制研究，TFC’15全国薄膜技术学术研讨会，武汉，中国，8月21-24号, 2015。
(5)许磊，李祎，缪向水，AgInSbTe硫系化合物忆阻材料及特性研究，TFC’15全国薄膜技术学术研讨会，武汉，中国，8月21-24号, 2015。
(6)
2014
(1)Bijian Zeng, Jun Zhu Huang, Ri Wen Ni, Nian Nian Yu, Wei Wei, Yang Zi Hu, Zhen Li, Xiang Shui Miao, Metallic resist for phase change lithography, Optical Data Storage 2014, San Diego, US, August 2014 (Invited talk)
(2)Xiawei Guan, Xiaomin Cheng, Ting Huang, Xiangshui Miao, Interfacial mechanism of high perpendicular anisotropy in CoFe/A1-FePt films for spintronic device application，InterMAG2014,Dresden,Germany, May 4th-8th, 2014
(3)Ting Huang, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao,Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film, InterMAG2014,Dresden, Germany,May 4-8, 2014
(4)Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiawei Guan, Xiangshui Miao, Ferromagnetism Modulation by Phase Change in Mn doped GeTe Chalcogenide Magnetic Material，InterMAG2014, Dresden, Germany，May 4th-8th, 2014
(5)Zhou Jiao, Hongkai Ji, Tian Lan, Junbing Yan, Wenli Zhou, Xiangshui Miao.New Insulating Layer for Phase Change Memory Devices with Low RESET Current,2014 MRS Spring Meeting,San Francisco,US,April 21-25, 2014.
(6)Niannian Yu, Hao Tong, Xiangshui Miao, Structural variety of amorphous phase change ultrathin films, Nano and Giga Challenges in Electronics, Photonics and Renewable Energy, Phoenix Arizona,US,March 10-14, 2014.
2013:
(7)Chalcogenide Memristors for Neuromorphic Computing,X. S. Miao, Y. Li, J. J. Zhang, Y. P. Zhong, L. Xu, X. M. Cheng,13th Non-VolatileMemoryTechnologySymposium(NVMTS), US, AUG 2013(Invited talk)
(8)Three-Dimensional Simulation and Analysis of Phase Change Random Access Memory Cell with Novel Asymmetric Structure, J.J Sun，X.M Cheng, X.S Miao,13th Non-VolatileMemoryTechnologySymposium(NVMTS), US, AUG 2013
(9)Fabrication independent from lithography resolution for lateral phase change random access memory, T.Lan, W.L.Zhou, J.Zhou, X.S.Miao,13th Non-VolatileMemoryTechnologySymposium(NVMTS), US, AUG 2013
(10)Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Niannian Yu, Hao Tong, Xiangshui Miao,13th Non-VolatileMemoryTechnologySymposium(NVMTS), US, AUG 2013
(11)La-Co pair substituted strontium ferrite films with perpendicular magnetization,Y. J. Hui, W. M. Cheng, G. Q. Lin and X. S. Miao,Asia-Pacific Data Storage Conference 2013(APDSC’13), Taiwan, NOV 2013(Invited talk)
(12)Coexistence of charge trapping and silver filaments in AgInSbTe memristor, J. J. Zhang,H. J. Sun, Y. Li, Q. Wang, X. H. Xu and X. S. Miao,2013European Phase Change and Ovonic ScienceSymposium(E*PCOS),Germany,SEP 2013 (poster)
(13)Phase-Change Lithography based on Metallic Glass Thin Film,B. J. Zeng, J. Z. Huang, Z. Li, X. S. Miao,International Symposium on Photoelectronic Detection and Imaging (ISPDI ), Beijing, JUN2013 (Invited talk)
(14)相变存储器及忆阻器，缪向水，国际微电子学术会议，武汉，2013年8月
(15)硫系化合物半导体材料-从相变存储器到忆阻器，缪向水，第八届中国功能材料及其应用学术会议，哈尔滨，2013年8月
2012:
(16)A Promising Artificial Electronic Synapse : Phase-Change Memory,Y. Li, X. S. Miao, Y. P. Zhong, H. J. Sun,12th Non-VolatileMemoryTechnologySymposiym (NVMTS), Singapore, NOV 2012(Invited talk)
(17)Phase change material and phase change memory,X. S. Miao,H. Tong, X. M. Cheng, Z. Li, W. L. Zhou,2012 International Workshop on Information Storage/9th International Symposium on Optical Storage (IWIS/ISOS 2012), Shanghai, China, OCT 2012(Invited talk)
(18)Phase Change Lithography and Wet-etching Based on Metallic Glass Materials,B. J. Zeng, X. S. Miao, Z. Li, W. L. Zhou,International Symposium on Optical Memory(ISOM), Japan, SEP 2012(Invited talk)
(19)Phase changematerials and phase change memory, X. S. Miao, 1stAsian Nonvolatile Memory Workshop, Beijing, China, JUL 2012(Invited talk)
(20)Implementation of neuronal and synaptic functionsin phase change memory,Y. Li, X. S. Miao, Y. P. Zhong, H. J. Sun,2012 European Phase Change and Ovonic ScienceSymposium(E*PCOS),Tampere, Finland,JUL 2012 (Invited poster)
(21)Nanopatterning by Phase ChangeNanolithography,X. S. Miao, B. J. Zeng, Z. Li, W. L. Zhou,7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2012), MAR2012 (Invited talk)
2011:
(1)Nanolithography by Phase Change Materials, X. S. Miao, B. J. Zeng, Z. Li, W. L. Zhou,International Symposium on Advanced Nanomaterials and Nanosystems (ANN2011), China, NOV 2011 (Invited talk)
(2)Phase-change control of ferromagnetismin GeTe-based phase change magnetic films,F. Tong, X. S. Miao,2011European Phase Change and Ovonic ScienceSymposium,Swiss, SEP 2011 (Invited talk)
(3)Identification of Vacancy Ratio in Crystalline GeTe Films,F.Tong, X. S.Miao,Joint International Symposium on Optical Memory and Optical Data Storage (ISOM/ODS), USA, JUL 2011 (Invited talk)
(4)First Principles Calculation on Magnetic Properties of SmCo5 Doped with Transition Metals ,W. M. Cheng, H.Tang, S.H. Zhao, X. M. Cheng, X. S. Miao,Proceedings of 4thinternational conference on magneto science, China, OCT 2011
(5)Effect of Sputtering Parameters and Annealing on the Magnetic Properties of SmCo Films,W. M. Cheng, H. Hu, Y. F. Dai, X. M. Cheng, X. S. Miao,Proceedings of 4thinternational conference on magneto science, China, OCT 2011
(6)Calculation of Magnetic Anisotropy Energy SmCo5-XCuX,W. M. Cheng, S.H. Zhao, X. M. Cheng, X. S. Miao,Proceedings of 4thinternational conference on magneto science, China, OCT 2011
(7)Influence of Cu Substitution on the Magnetic Properties and Microstructure of SmCo Films,W. M. Cheng, Y. F. Dai, H. Hu, X. M. Cheng, X. S. Miao,Proceedings of 4thinternational conference on magneto science, China, OCT 2011
2010:
(1)Thermal conductivity of phase change material with superlattice structure, Tong H, Wang H, Miao XS,2010European Phase Change and Ovonic ScienceSymposium, Italy, SEP 2010 (Invited poster)
(2)Nonvolatile Phase Change Random Access Memory,X. S. Miao, W. L. Zhou, X. M. Cheng and Z. Li,International Symposium on Advanced Nanomaterials and Nanosystems (ANN2010), Japan, MAY 2010 (Invited talk)
(3)New video disc for high-density storage, 26thOptical Data Storage (ODS) Topical Meeting, USA, MAY 2010 (Invited talk)
2009:
(1)Fabricationand Properties ofNd(Tb,Dy)Co/Cr Films with Perpendicular Magnetic Anisotropy，ChengWM, MiaoXS, YanJB, ChengXM, POEM2009;Proceedings of SPIE，Vol. 7517 Article Number: 75170Y
(2)Mathematical analysis of temperature distribution in hybrid recording film using AFM tip writing，J B Yan, Z Y Li , K F Dong,W M Cheng, G Q Lin, X S Miao, POEM 2009;Proceedings of SPIE，Vol. 7517 Article Number: 75170Z
2008:
(1)The Influenceof Underlayers on the Magnetic Properties of TbFeCo Films for HybridRecording，Cheng WM, Miao XS, Yan JB, Lin GQ, POEM 2008;Proceedings of SPIE，Vol. 7125，Article Number: 71250U
(2)Effect of thin carbon layer insertion on the magnetic property and microstructure of CoCrPt/Ti hybrid recording media，Cheng XM,Miao XS,Yang XF,Li Z,Lin GQ,Li ZY, POEM2008;Proceedings of SPIE，Vol. 7125，Article Number: 71250S
(3)The influence of Porous Alumina Underlayer on structure and magnetization reverals of Hybrid Recording Media，J B Yan,Z Y Li , K F Dong,P Li, G Q Lin, X S Miao, POEM2008;Proceedings of SPIE，Vol. 7125，Article Number: 71250N
(4)The effect of different cooling processes on the microstructure andmagnetic properties of FePt single layer films,Dong, Kai-Feng,Yang, Xiao-Fei, Miao, Xiang-Shui,Xu, Xiao-Hong, Cheng, Xiao-Min, Wang, Fang, Yan, Jun-Bing, Cheng, Wei-Ming, POEM2008;Proceedings of SPIE，Vol. 7125 Article Number: 71250T
